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JPS57211273A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS57211273A
JPS57211273A JP56096906A JP9690681A JPS57211273A JP S57211273 A JPS57211273 A JP S57211273A JP 56096906 A JP56096906 A JP 56096906A JP 9690681 A JP9690681 A JP 9690681A JP S57211273 A JPS57211273 A JP S57211273A
Authority
JP
Japan
Prior art keywords
transistor
circuit
resistor
threshold voltage
increase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56096906A
Other languages
Japanese (ja)
Inventor
Toru Furuyama
Hiroshi Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56096906A priority Critical patent/JPS57211273A/en
Publication of JPS57211273A publication Critical patent/JPS57211273A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)

Abstract

PURPOSE:To increase the threshold voltage of other internal circuits while the threshold voltage of a transistor is left as it is dropped by previously preventing ion inplantation to a field oxide film on a transistor region when an input pin, a protective resistor and an internal circuit are connected in series and the transistor grounded between the resistor and the circuit is formed and used as an IC incorporating a protective circuit. CONSTITUTION:An input pin 11, a protective resistor R and an internal circuit 12 are connected in series, the gate and source of drain of a field transistor Tr for protection are connected to the connecting wire of the resistor R and the circuit 12, and the drain or the source is grounded. Ions are inplanted in a field insulating film in order to increase the threshold voltage of the parasitic field transistor of the internal circuit, but a region 15 surrounded by a one dot chain line in the Tr is coated with a mask at that time, and ion inplantation to the region is previously prevented. Figures 13, 14 shown in the figure are contact holes for connection. Accordingly, the increase of the potential of a node A is obviated even when surge is applied to the pin 11.
JP56096906A 1981-06-23 1981-06-23 Semiconductor integrated circuit device Pending JPS57211273A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56096906A JPS57211273A (en) 1981-06-23 1981-06-23 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56096906A JPS57211273A (en) 1981-06-23 1981-06-23 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS57211273A true JPS57211273A (en) 1982-12-25

Family

ID=14177402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56096906A Pending JPS57211273A (en) 1981-06-23 1981-06-23 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57211273A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6144471A (en) * 1984-06-06 1986-03-04 テキサス　インスツルメンツ　インコーポレイテッド Electrostatic discharge protecting circuit of semiconductor device
US4727405A (en) * 1985-11-27 1988-02-23 Nec Corporation Protective network
US5196913A (en) * 1988-07-11 1993-03-23 Samsung Electronics Co., Ltd. Input protection device for improving of delay time on input stage in semi-conductor devices

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6144471A (en) * 1984-06-06 1986-03-04 テキサス　インスツルメンツ　インコーポレイテッド Electrostatic discharge protecting circuit of semiconductor device
JPH0558583B2 (en) * 1984-06-06 1993-08-26 Texas Instruments Inc
US4727405A (en) * 1985-11-27 1988-02-23 Nec Corporation Protective network
US5196913A (en) * 1988-07-11 1993-03-23 Samsung Electronics Co., Ltd. Input protection device for improving of delay time on input stage in semi-conductor devices

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