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JPS5721883A - Magnetic reluctance effect element - Google Patents

Magnetic reluctance effect element

Info

Publication number
JPS5721883A
JPS5721883A JP9648180A JP9648180A JPS5721883A JP S5721883 A JPS5721883 A JP S5721883A JP 9648180 A JP9648180 A JP 9648180A JP 9648180 A JP9648180 A JP 9648180A JP S5721883 A JPS5721883 A JP S5721883A
Authority
JP
Japan
Prior art keywords
axis direction
magnetizable
film
magnetic field
effect element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9648180A
Other languages
Japanese (ja)
Other versions
JPH0221153B2 (en
Inventor
Shunichi Matsukawa
Masaya Hijikigawa
Mitsuhiko Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP9648180A priority Critical patent/JPS5721883A/en
Publication of JPS5721883A publication Critical patent/JPS5721883A/en
Publication of JPH0221153B2 publication Critical patent/JPH0221153B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Magnetic Heads (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

PURPOSE:To obtain a reproduction output waveform readily digitally processed by utilizing critical magnetic inversion phenomenon with the element structure formed in planar hole effect type. CONSTITUTION:Terminals 5, 6 are so provided as to flow a detecting current is in a magnetizable direction (X-axis direction) 10 of a ferromagnetic film 4 having one axis magnetic anisotropy, a conductor 8 for flowing bias current IB is provided via an insulating layer above or below the film 4 so as to apply bias magnetic field to the hard magnetizable axis direction (Y-axis direction) of the film 4, and a signal magnetic field Hsig is applied to the easy magnetizable axis direction.
JP9648180A 1980-07-14 1980-07-14 Magnetic reluctance effect element Granted JPS5721883A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9648180A JPS5721883A (en) 1980-07-14 1980-07-14 Magnetic reluctance effect element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9648180A JPS5721883A (en) 1980-07-14 1980-07-14 Magnetic reluctance effect element

Publications (2)

Publication Number Publication Date
JPS5721883A true JPS5721883A (en) 1982-02-04
JPH0221153B2 JPH0221153B2 (en) 1990-05-11

Family

ID=14166243

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9648180A Granted JPS5721883A (en) 1980-07-14 1980-07-14 Magnetic reluctance effect element

Country Status (1)

Country Link
JP (1) JPS5721883A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58190082A (en) * 1982-04-30 1983-11-05 Nec Corp Hall element with hysteresis
FR2750769A1 (en) * 1996-07-05 1998-01-09 Thomson Csf THIN FILM MAGNETIC FIELD SENSOR
JP2007120690A (en) * 2005-10-31 2007-05-17 Iseki & Co Ltd Shift operation device of working vehicle

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4994259A (en) * 1973-01-11 1974-09-06
JPS5534450A (en) * 1978-08-30 1980-03-11 Sharp Corp Method of applying bias magnetic field of magnetoresistance element
JPS5534448A (en) * 1978-08-30 1980-03-11 Sharp Corp Thin film magnetoresistance element bias magnetic field adjusting method
JPS5534449A (en) * 1978-08-30 1980-03-11 Sharp Corp Thin film magnetoresistance element with bias magnetic field minute adjusting mechanism
JPS5638477U (en) * 1979-08-31 1981-04-11

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5255014A (en) * 1975-10-31 1977-05-06 Shimizu Construction Co Ltd Operation method of lock oil tanks

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4994259A (en) * 1973-01-11 1974-09-06
JPS5534450A (en) * 1978-08-30 1980-03-11 Sharp Corp Method of applying bias magnetic field of magnetoresistance element
JPS5534448A (en) * 1978-08-30 1980-03-11 Sharp Corp Thin film magnetoresistance element bias magnetic field adjusting method
JPS5534449A (en) * 1978-08-30 1980-03-11 Sharp Corp Thin film magnetoresistance element with bias magnetic field minute adjusting mechanism
JPS5638477U (en) * 1979-08-31 1981-04-11

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58190082A (en) * 1982-04-30 1983-11-05 Nec Corp Hall element with hysteresis
JPH0475673B2 (en) * 1982-04-30 1992-12-01 Nippon Electric Co
FR2750769A1 (en) * 1996-07-05 1998-01-09 Thomson Csf THIN FILM MAGNETIC FIELD SENSOR
WO1998001764A1 (en) * 1996-07-05 1998-01-15 Thomson-Csf Thin-layered magnetic field sensor
US6191581B1 (en) * 1996-07-05 2001-02-20 Thomson-Csf Planar thin-film magnetic field sensor for determining directional magnetic fields
JP2007120690A (en) * 2005-10-31 2007-05-17 Iseki & Co Ltd Shift operation device of working vehicle

Also Published As

Publication number Publication date
JPH0221153B2 (en) 1990-05-11

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