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JPS57192047A - Wiring layer in semiconductor device and manufacture thereof - Google Patents

Wiring layer in semiconductor device and manufacture thereof

Info

Publication number
JPS57192047A
JPS57192047A JP7740181A JP7740181A JPS57192047A JP S57192047 A JPS57192047 A JP S57192047A JP 7740181 A JP7740181 A JP 7740181A JP 7740181 A JP7740181 A JP 7740181A JP S57192047 A JPS57192047 A JP S57192047A
Authority
JP
Japan
Prior art keywords
platinum
layer
semiconductor device
silicide
polysilicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7740181A
Other languages
Japanese (ja)
Inventor
Atsushi Funada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7740181A priority Critical patent/JPS57192047A/en
Priority to DE19823218974 priority patent/DE3218974A1/en
Publication of JPS57192047A publication Critical patent/JPS57192047A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76889—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances by forming silicides of refractory metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain ohmic contact in both P type and N type regions and to avoid the formation of an unnecessary diode by forming the wiring layer in the semiconductor device by metal silicide. CONSTITUTION:A platinum layer 8 is formed on the entire surface after plasma ethcing. The thickness of the layer is made thicker than the thickness of a polysilicon layer 7. The reason why is that the platinum silicide layer must reach the P type region 2 and the N type region 3 in holes 5 and 6 so as to form the ohmic contact at the next step when the platinum and the polysilicon are reacted to form the platinum silicide by heat treatment. By this heat treatment, the polysilicon layer 7 and the platinum 8 are reacted, but the part other than the layer 7 is left as the platinum. Then the platinum is removed in aqua regia, the unreacted platinum layer is removed, and only the platinum silicide layer remains.
JP7740181A 1981-05-20 1981-05-20 Wiring layer in semiconductor device and manufacture thereof Pending JPS57192047A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP7740181A JPS57192047A (en) 1981-05-20 1981-05-20 Wiring layer in semiconductor device and manufacture thereof
DE19823218974 DE3218974A1 (en) 1981-05-20 1982-05-19 Interconnection layer for semiconductor devices and method of producing it

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7740181A JPS57192047A (en) 1981-05-20 1981-05-20 Wiring layer in semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57192047A true JPS57192047A (en) 1982-11-26

Family

ID=13632873

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7740181A Pending JPS57192047A (en) 1981-05-20 1981-05-20 Wiring layer in semiconductor device and manufacture thereof

Country Status (2)

Country Link
JP (1) JPS57192047A (en)
DE (1) DE3218974A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62120354U (en) * 1986-01-22 1987-07-30
JPH07221096A (en) * 1994-01-24 1995-08-18 Lg Semicon Co Ltd Silicide plug formation

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59154040A (en) * 1983-02-22 1984-09-03 Toshiba Corp Manufacture of semiconductor device
DE3314879A1 (en) * 1983-04-25 1984-10-25 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING STABLE, LOW-RESISTANT CONTACTS IN INTEGRATED SEMICONDUCTOR CIRCUITS
JPS62172755A (en) * 1986-01-27 1987-07-29 Canon Inc Manufacture of photosensor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5131189A (en) * 1974-09-11 1976-03-17 Sony Corp HANDOTA ISOCHI
JPS5521131A (en) * 1978-08-01 1980-02-15 Seiko Epson Corp Semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4265935A (en) * 1977-04-28 1981-05-05 Micro Power Systems Inc. High temperature refractory metal contact assembly and multiple layer interconnect structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5131189A (en) * 1974-09-11 1976-03-17 Sony Corp HANDOTA ISOCHI
JPS5521131A (en) * 1978-08-01 1980-02-15 Seiko Epson Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62120354U (en) * 1986-01-22 1987-07-30
JPH07221096A (en) * 1994-01-24 1995-08-18 Lg Semicon Co Ltd Silicide plug formation

Also Published As

Publication number Publication date
DE3218974A1 (en) 1982-12-16
DE3218974C2 (en) 1992-05-14

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