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JPS57188894A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS57188894A
JPS57188894A JP7349381A JP7349381A JPS57188894A JP S57188894 A JPS57188894 A JP S57188894A JP 7349381 A JP7349381 A JP 7349381A JP 7349381 A JP7349381 A JP 7349381A JP S57188894 A JPS57188894 A JP S57188894A
Authority
JP
Japan
Prior art keywords
temperature
constant
peltier element
laser diode
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7349381A
Other languages
Japanese (ja)
Inventor
Takeo Takahashi
Masato Tozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Renesas Eastern Japan Semiconductor Inc
Hitachi Iruma Electronic Co Ltd
Original Assignee
Hitachi Ltd
Hitachi Tohbu Semiconductor Ltd
Hitachi Iruma Electronic Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Tohbu Semiconductor Ltd, Hitachi Iruma Electronic Co Ltd filed Critical Hitachi Ltd
Priority to JP7349381A priority Critical patent/JPS57188894A/en
Publication of JPS57188894A publication Critical patent/JPS57188894A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To obtain a semiconductor laser device with a laser diode whose temperature is accurate and constant and free from fluctuation depending on the passage of time by a construction wherein a transistor for temperature detection is incorporated into a chip of the laser diode. CONSTITUTION:A superior heat conductive insulating plate 19 is used to insulate a laser diode element 17 from a Peltier element 18. As the voltage between te base and emitter, when a constant current is made to flow into a transistor 20 formed within the element 17, changes with the temperature of the element (absolute temperature), the signal is detected by a detector 21 to control the voltage value applied to the Peltier element 18 by a Peltier element controller 22 so as to keep the temperature of the element 17 constant. By the detection of the temperature in the LD cavity, together by the use of the Peltier element as a temperature control medium, the LD may be operated always at a constant temperature.
JP7349381A 1981-05-18 1981-05-18 Semiconductor laser device Pending JPS57188894A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7349381A JPS57188894A (en) 1981-05-18 1981-05-18 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7349381A JPS57188894A (en) 1981-05-18 1981-05-18 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS57188894A true JPS57188894A (en) 1982-11-19

Family

ID=13519843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7349381A Pending JPS57188894A (en) 1981-05-18 1981-05-18 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS57188894A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3342111A1 (en) * 1982-11-24 1984-05-24 Hitachi, Ltd., Tokio/Tokyo SEMICONDUCTOR LASER DEVICE
DE3603548A1 (en) * 1985-02-19 1986-10-02 Videoton Elektronikai Vállalat, Székesfehérvár Method for determining and regulating the temperature of laser diodes, and a circuit arrangement for carrying out the method
JPH02137285A (en) * 1988-11-17 1990-05-25 Matsushita Electric Ind Co Ltd Photoelectron integrated circuit
FR2656093A1 (en) * 1989-12-20 1991-06-21 United Technologies Corp METHOD AND DEVICE FOR MEASURING THE TEMPERATURE OF A LIGHT SOURCE OF SEMICONDUCTOR MATERIAL
WO1992019014A1 (en) * 1991-04-15 1992-10-29 Honeywell Inc. Semiconductor light source temperature control
JP2015041681A (en) * 2013-08-21 2015-03-02 住友電工デバイス・イノベーション株式会社 Method for controlling light-emitting module

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3342111A1 (en) * 1982-11-24 1984-05-24 Hitachi, Ltd., Tokio/Tokyo SEMICONDUCTOR LASER DEVICE
FR2536596A1 (en) * 1982-11-24 1984-05-25 Hitachi Ltd SEMICONDUCTOR LASER DEVICE
DE3603548A1 (en) * 1985-02-19 1986-10-02 Videoton Elektronikai Vállalat, Székesfehérvár Method for determining and regulating the temperature of laser diodes, and a circuit arrangement for carrying out the method
JPH02137285A (en) * 1988-11-17 1990-05-25 Matsushita Electric Ind Co Ltd Photoelectron integrated circuit
FR2656093A1 (en) * 1989-12-20 1991-06-21 United Technologies Corp METHOD AND DEVICE FOR MEASURING THE TEMPERATURE OF A LIGHT SOURCE OF SEMICONDUCTOR MATERIAL
WO1992019014A1 (en) * 1991-04-15 1992-10-29 Honeywell Inc. Semiconductor light source temperature control
JP2015041681A (en) * 2013-08-21 2015-03-02 住友電工デバイス・イノベーション株式会社 Method for controlling light-emitting module

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