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JPS57188676A - Forming device for thin film by vacuum - Google Patents

Forming device for thin film by vacuum

Info

Publication number
JPS57188676A
JPS57188676A JP7134981A JP7134981A JPS57188676A JP S57188676 A JPS57188676 A JP S57188676A JP 7134981 A JP7134981 A JP 7134981A JP 7134981 A JP7134981 A JP 7134981A JP S57188676 A JPS57188676 A JP S57188676A
Authority
JP
Japan
Prior art keywords
source
evaporating
area
substrate
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7134981A
Other languages
Japanese (ja)
Inventor
Kazuo Tanida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7134981A priority Critical patent/JPS57188676A/en
Publication of JPS57188676A publication Critical patent/JPS57188676A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To control a sputtering source and an electron beam evaporating source respectively independently and to increase the speed of thin film formation in a device of making combination use of said evaporating source and sputtering source by locating the evaporating source behind the through-hole of a target plate facing a substrate. CONSTITUTION:A vacuum forming device 2 and a gas supplying and regulating device 3 are operated to keep a prescribed gaseous pressure in a vacuum vessel 1. A voltage is applied between a substrate 4 and a target plate 6 having a through-hole 9, and an electric discharging area 11 is formed between the plates 4 and 6. The gaseous ions in the area 11 sputter the surface of the plate 6, and the material of the sputtered surface of the plate 6 is stuck on the surface of the substrate 4. When an electron beam is irradiated to the evaporating material 12 contained in an evaporating source 10, the material 12 scatters radially, and advances into the area 11 by passing mainly through the hole 9 of the plate 6 in front of the source 10 in an arrow A range, and deposits on the substrate 4. Since the material 12 passes through the area 11, various phenomena such as excitation, ionication and the like affected by the area 11 are induced in the evaporating material and therefore, the thin film of the structure and properties differing from those in the case of pure vapor deposition are formed.
JP7134981A 1981-05-14 1981-05-14 Forming device for thin film by vacuum Pending JPS57188676A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7134981A JPS57188676A (en) 1981-05-14 1981-05-14 Forming device for thin film by vacuum

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7134981A JPS57188676A (en) 1981-05-14 1981-05-14 Forming device for thin film by vacuum

Publications (1)

Publication Number Publication Date
JPS57188676A true JPS57188676A (en) 1982-11-19

Family

ID=13457924

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7134981A Pending JPS57188676A (en) 1981-05-14 1981-05-14 Forming device for thin film by vacuum

Country Status (1)

Country Link
JP (1) JPS57188676A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6017070A (en) * 1983-07-11 1985-01-28 Nippon Telegr & Teleph Corp <Ntt> Method and device for forming thin film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6017070A (en) * 1983-07-11 1985-01-28 Nippon Telegr & Teleph Corp <Ntt> Method and device for forming thin film

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