JPS57187976A - Semiconductor photoelectric converter - Google Patents
Semiconductor photoelectric converterInfo
- Publication number
- JPS57187976A JPS57187976A JP56071717A JP7171781A JPS57187976A JP S57187976 A JPS57187976 A JP S57187976A JP 56071717 A JP56071717 A JP 56071717A JP 7171781 A JP7171781 A JP 7171781A JP S57187976 A JPS57187976 A JP S57187976A
- Authority
- JP
- Japan
- Prior art keywords
- resistivity
- film
- amorphous
- regions
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 5
- 238000000926 separation method Methods 0.000 abstract 4
- 239000002184 metal Substances 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To improve the coupling with a solid state scanning circuit by a method wherein the resistivity of the first amorphous Si film on metal electrodes is made low and amorphous Si regions of very high resistivity is provided between the metal electrodes for improvement of element separation efficiency. CONSTITUTION:The first and the third amorphous Si films 26 and 28 are generally have lower resistivity than the second intrinsic amorphous Si film 27. This relation is necessary especially in order not only to generate pairs of electron- positive hole by light incidence but also to avoid thermal injection of electrons or positive holes from electrodes. But this requirement is contrary to the requirements of separation between elements. Then, the regions of the film 26 on the metal electrodes are given low resistivity and the amorphous Si regions of very high resistivity are provided between the electrodes 25 for improvement of lement separation efficiency. In other words, high resistivity regions 30 are provided for element separation. This region 30 formed by injecting P-type impurity ion into a part of the film 26 selectively and making the resistivity of the part of the film 26 higher selectively by negating N-type impurity in that part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56071717A JPS57187976A (en) | 1981-05-13 | 1981-05-13 | Semiconductor photoelectric converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56071717A JPS57187976A (en) | 1981-05-13 | 1981-05-13 | Semiconductor photoelectric converter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57187976A true JPS57187976A (en) | 1982-11-18 |
Family
ID=13468550
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56071717A Pending JPS57187976A (en) | 1981-05-13 | 1981-05-13 | Semiconductor photoelectric converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57187976A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59132657A (en) * | 1983-01-20 | 1984-07-30 | Matsushita Electric Ind Co Ltd | Photoelectric conversion device |
| JPS60189379A (en) * | 1984-03-08 | 1985-09-26 | Matsushita Electric Ind Co Ltd | Solid-state image pickup device |
| JPS60247965A (en) * | 1984-05-23 | 1985-12-07 | Seiko Epson Corp | Solid-state image pickup element |
| JP2008270715A (en) * | 2007-04-23 | 2008-11-06 | Dongbu Hitek Co Ltd | Image sensor and its manufacturing method |
-
1981
- 1981-05-13 JP JP56071717A patent/JPS57187976A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59132657A (en) * | 1983-01-20 | 1984-07-30 | Matsushita Electric Ind Co Ltd | Photoelectric conversion device |
| JPS60189379A (en) * | 1984-03-08 | 1985-09-26 | Matsushita Electric Ind Co Ltd | Solid-state image pickup device |
| JPS60247965A (en) * | 1984-05-23 | 1985-12-07 | Seiko Epson Corp | Solid-state image pickup element |
| JP2008270715A (en) * | 2007-04-23 | 2008-11-06 | Dongbu Hitek Co Ltd | Image sensor and its manufacturing method |
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