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JPS57187975A - Photoelectric converter - Google Patents

Photoelectric converter

Info

Publication number
JPS57187975A
JPS57187975A JP56072198A JP7219881A JPS57187975A JP S57187975 A JPS57187975 A JP S57187975A JP 56072198 A JP56072198 A JP 56072198A JP 7219881 A JP7219881 A JP 7219881A JP S57187975 A JPS57187975 A JP S57187975A
Authority
JP
Japan
Prior art keywords
layers
sides
amorphous
type amorphous
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56072198A
Other languages
Japanese (ja)
Inventor
Kazuhiko Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP56072198A priority Critical patent/JPS57187975A/en
Publication of JPS57187975A publication Critical patent/JPS57187975A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/043—Mechanically stacked PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain a photoelectric converter of a multi-layer composition by one growing operation of a semiconductor film and improve photoelectric conversion efficiency by forming unit solar battery elements on both sides of a substrate independently. CONSTITUTION:Unit solar battery elements 7a and 7b are composed of transparent conductive films 2, N<+>type amorphous Si layers 3a and 3b, an I type amorphous Si layers 4a and 4b, P type amorphous Si layer 5a and 5b, transparent conductive film 2 and drawing-out electrodes 6 formed on both sides of a transparent glass substrate 1. Respective amorphous Si layers can be formed simultaneously on the transparent electrode 2 formed on both sides of the substrate 1 by making amorphous Si grow by plasma decomposition. With this constitution, as the light which enters from the side of the element 7a and is trasmitted through the element 7a enters the element 7b again, this composition functions as a double-layer composition. Moreover, the outputs generated by respective elements 7a and 7b can be taken out independently and the coversion efficiency can be improved.
JP56072198A 1981-05-15 1981-05-15 Photoelectric converter Pending JPS57187975A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56072198A JPS57187975A (en) 1981-05-15 1981-05-15 Photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56072198A JPS57187975A (en) 1981-05-15 1981-05-15 Photoelectric converter

Publications (1)

Publication Number Publication Date
JPS57187975A true JPS57187975A (en) 1982-11-18

Family

ID=13482286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56072198A Pending JPS57187975A (en) 1981-05-15 1981-05-15 Photoelectric converter

Country Status (1)

Country Link
JP (1) JPS57187975A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6030163A (en) * 1983-07-28 1985-02-15 Fuji Electric Corp Res & Dev Ltd Thin film solar cell module
JPS628578A (en) * 1985-06-04 1987-01-16 シーメンス　ソーラー　インダストリーズ，エル．ピー． Thin film solar cell module
JPS6293982A (en) * 1985-10-11 1987-04-30 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド Optical filter generating electric power
US4948436A (en) * 1988-02-05 1990-08-14 Siemens Aktiengesellschaft Thin-film solar cell arrangement
JP2012134464A (en) * 2010-11-30 2012-07-12 Daikin Ind Ltd Solar cell system
JP5043244B1 (en) * 2012-02-20 2012-10-10 立山科学工業株式会社 Solar power system
WO2014119055A1 (en) * 2013-02-01 2014-08-07 立山科学工業株式会社 Solar panel installation surface structure
WO2018021525A1 (en) * 2016-07-28 2018-02-01 株式会社エヌティーアイ Photoelectric conversion apparatus

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6030163A (en) * 1983-07-28 1985-02-15 Fuji Electric Corp Res & Dev Ltd Thin film solar cell module
JPH0527278B2 (en) * 1983-07-28 1993-04-20 Fuji Denki Sogo Kenkyusho Kk
JPS628578A (en) * 1985-06-04 1987-01-16 シーメンス　ソーラー　インダストリーズ，エル．ピー． Thin film solar cell module
JPS6293982A (en) * 1985-10-11 1987-04-30 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド Optical filter generating electric power
US4948436A (en) * 1988-02-05 1990-08-14 Siemens Aktiengesellschaft Thin-film solar cell arrangement
JP2012134464A (en) * 2010-11-30 2012-07-12 Daikin Ind Ltd Solar cell system
JP5043244B1 (en) * 2012-02-20 2012-10-10 立山科学工業株式会社 Solar power system
WO2013125105A1 (en) * 2012-02-20 2013-08-29 立山科学工業株式会社 Photovoltaic power system
WO2014119055A1 (en) * 2013-02-01 2014-08-07 立山科学工業株式会社 Solar panel installation surface structure
JP2014150180A (en) * 2013-02-01 2014-08-21 Tateyama Kagaku Kogyo Kk Installation surface structure for photovoltaic power generation panel
WO2018021525A1 (en) * 2016-07-28 2018-02-01 株式会社エヌティーアイ Photoelectric conversion apparatus

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