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JPS57185973A - Production of target for sputtering - Google Patents

Production of target for sputtering

Info

Publication number
JPS57185973A
JPS57185973A JP6763081A JP6763081A JPS57185973A JP S57185973 A JPS57185973 A JP S57185973A JP 6763081 A JP6763081 A JP 6763081A JP 6763081 A JP6763081 A JP 6763081A JP S57185973 A JPS57185973 A JP S57185973A
Authority
JP
Japan
Prior art keywords
target
plate
backing plate
alloy
adhesive strength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6763081A
Other languages
Japanese (ja)
Other versions
JPS6344820B2 (en
Inventor
Satoru Ishihara
Shigeru Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Mining and Smelting Co Ltd
Original Assignee
Mitsui Mining and Smelting Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining and Smelting Co Ltd filed Critical Mitsui Mining and Smelting Co Ltd
Priority to JP6763081A priority Critical patent/JPS57185973A/en
Publication of JPS57185973A publication Critical patent/JPS57185973A/en
Publication of JPS6344820B2 publication Critical patent/JPS6344820B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To produce a target having high adhesive strength to a backing plate in the stage of producing the target to be used for sputtering methods by forming a thin metallic film on the backing plate then pouring and casting a prescribed metal for target. CONSTITUTION:After a backing plate 1 made of oxygen-free copper is electrolytically defatted and cleaned, Ni plating of about 5mu thickness is carried out on a shaded 2 part. This is mounted in a stainless steel die 3 and a molten In-Sn alloy of 90% In and 10% Sn is cast between the die 3 and a backing plate 1, whereby an In alloy target bonded to the plate 1 is produced. This target has high adhesive strength between the plate 1 and the In alloy plate. The thin film of InO2 obtd. when used as a target in sputtering methods is always uniform and has high film quality.
JP6763081A 1981-05-07 1981-05-07 Production of target for sputtering Granted JPS57185973A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6763081A JPS57185973A (en) 1981-05-07 1981-05-07 Production of target for sputtering

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6763081A JPS57185973A (en) 1981-05-07 1981-05-07 Production of target for sputtering

Publications (2)

Publication Number Publication Date
JPS57185973A true JPS57185973A (en) 1982-11-16
JPS6344820B2 JPS6344820B2 (en) 1988-09-07

Family

ID=13350490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6763081A Granted JPS57185973A (en) 1981-05-07 1981-05-07 Production of target for sputtering

Country Status (1)

Country Link
JP (1) JPS57185973A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6060454U (en) * 1983-09-30 1985-04-26 鹿児島日本電気株式会社 Target for sputtering
JPS61136673A (en) * 1984-12-07 1986-06-24 Sumitomo Special Metals Co Ltd Target material for sputtering
EP0768387A1 (en) * 1995-10-11 1997-04-16 LEYBOLD MATERIALS GmbH Fine grained sputtering target with a given width-thickness ratio and process for its manufacture
JP2012052190A (en) * 2010-09-01 2012-03-15 Jx Nippon Mining & Metals Corp Indium target and method for production thereof
JP2012184469A (en) * 2011-03-04 2012-09-27 Mitsubishi Materials Corp METHOD FOR PRODUCING In SPUTTERING TARGET
JP5074628B1 (en) * 2012-01-05 2012-11-14 Ｊｘ日鉱日石金属株式会社 Indium sputtering target and method for manufacturing the same
KR101297446B1 (en) * 2011-03-01 2013-08-16 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 Indium target and method for producing the same
TWI473898B (en) * 2011-04-15 2015-02-21 Mitsui Mining & Smelting Co Spattering target for a solar battery
JP2015036431A (en) * 2013-08-12 2015-02-23 住友金属鉱山株式会社 Cylindrical sputtering target and manufacturing method of the same
US9023487B2 (en) 2011-09-21 2015-05-05 Jx Nippon Mining & Metals Corporation Laminated structure and method for producing the same
US9490108B2 (en) 2010-09-01 2016-11-08 Jx Nippon Mining & Metals Corporation Indium target and method for manufacturing same
US9761421B2 (en) 2012-08-22 2017-09-12 Jx Nippon Mining & Metals Corporation Indium cylindrical sputtering target and manufacturing method thereof
US9922807B2 (en) 2013-07-08 2018-03-20 Jx Nippon Mining & Metals Corporation Sputtering target and method for production thereof
CN108165936A (en) * 2017-12-21 2018-06-15 清远先导材料有限公司 The method for preparing indium target
CN108754437A (en) * 2014-02-04 2018-11-06 Ｊｘ金属株式会社 Sputtering target
CN110016576A (en) * 2019-04-12 2019-07-16 东莞市欧莱溅射靶材有限公司 Gun-metal target production technology

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4872014B1 (en) * 2010-08-31 2012-02-08 Ｊｘ日鉱日石金属株式会社 Laminated structure and manufacturing method thereof
JP4837785B1 (en) * 2010-09-01 2011-12-14 Ｊｘ日鉱日石金属株式会社 Indium target and manufacturing method thereof
JP4884561B1 (en) * 2011-04-19 2012-02-29 Ｊｘ日鉱日石金属株式会社 Indium target and manufacturing method thereof
KR101365284B1 (en) * 2011-12-12 2014-02-19 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 Indium sputtering target member and method of producing the same
JP5281186B1 (en) * 2012-10-25 2013-09-04 Ｊｘ日鉱日石金属株式会社 Indium target and manufacturing method thereof

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6060454U (en) * 1983-09-30 1985-04-26 鹿児島日本電気株式会社 Target for sputtering
JPS61136673A (en) * 1984-12-07 1986-06-24 Sumitomo Special Metals Co Ltd Target material for sputtering
EP0768387A1 (en) * 1995-10-11 1997-04-16 LEYBOLD MATERIALS GmbH Fine grained sputtering target with a given width-thickness ratio and process for its manufacture
JP2012052190A (en) * 2010-09-01 2012-03-15 Jx Nippon Mining & Metals Corp Indium target and method for production thereof
US9490108B2 (en) 2010-09-01 2016-11-08 Jx Nippon Mining & Metals Corporation Indium target and method for manufacturing same
KR101297446B1 (en) * 2011-03-01 2013-08-16 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 Indium target and method for producing the same
US9139900B2 (en) 2011-03-01 2015-09-22 JX Nippon Mining Metals Corporation Indium target and manufacturing method thereof
JP2012184469A (en) * 2011-03-04 2012-09-27 Mitsubishi Materials Corp METHOD FOR PRODUCING In SPUTTERING TARGET
TWI473898B (en) * 2011-04-15 2015-02-21 Mitsui Mining & Smelting Co Spattering target for a solar battery
US9023487B2 (en) 2011-09-21 2015-05-05 Jx Nippon Mining & Metals Corporation Laminated structure and method for producing the same
JP5074628B1 (en) * 2012-01-05 2012-11-14 Ｊｘ日鉱日石金属株式会社 Indium sputtering target and method for manufacturing the same
WO2013103029A1 (en) * 2012-01-05 2013-07-11 Jx日鉱日石金属株式会社 Indium sputtering target, and method for producing same
US9758860B2 (en) 2012-01-05 2017-09-12 Jx Nippon Mining & Metals Corporation Indium sputtering target and method for manufacturing same
US9761421B2 (en) 2012-08-22 2017-09-12 Jx Nippon Mining & Metals Corporation Indium cylindrical sputtering target and manufacturing method thereof
US9922807B2 (en) 2013-07-08 2018-03-20 Jx Nippon Mining & Metals Corporation Sputtering target and method for production thereof
JP2015036431A (en) * 2013-08-12 2015-02-23 住友金属鉱山株式会社 Cylindrical sputtering target and manufacturing method of the same
CN108754437A (en) * 2014-02-04 2018-11-06 Ｊｘ金属株式会社 Sputtering target
CN108754437B (en) * 2014-02-04 2021-06-29 Ｊｘ金属株式会社 Sputtering target
CN108165936A (en) * 2017-12-21 2018-06-15 清远先导材料有限公司 The method for preparing indium target
CN110016576A (en) * 2019-04-12 2019-07-16 东莞市欧莱溅射靶材有限公司 Gun-metal target production technology
CN110016576B (en) * 2019-04-12 2022-03-01 东莞市欧莱溅射靶材有限公司 Production process of tin-copper alloy target

Also Published As

Publication number Publication date
JPS6344820B2 (en) 1988-09-07

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