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JPS57184220A - Protective method for conforming mark with eye in manufacture of semiconductor device - Google Patents

Protective method for conforming mark with eye in manufacture of semiconductor device

Info

Publication number
JPS57184220A
JPS57184220A JP56069012A JP6901281A JPS57184220A JP S57184220 A JPS57184220 A JP S57184220A JP 56069012 A JP56069012 A JP 56069012A JP 6901281 A JP6901281 A JP 6901281A JP S57184220 A JPS57184220 A JP S57184220A
Authority
JP
Japan
Prior art keywords
conforming
particle beams
eyes
marks
charged particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56069012A
Other languages
Japanese (ja)
Other versions
JPH0328052B2 (en
Inventor
Yasuo Iida
Shinji Ishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56069012A priority Critical patent/JPS57184220A/en
Publication of JPS57184220A publication Critical patent/JPS57184220A/en
Publication of JPH0328052B2 publication Critical patent/JPH0328052B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/708—Mark formation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To protect the conforming mark with eyes of a substrate on which a positive resist is applied by doubly exposing the conforming mark with eyes and the circumference by charged particle beams and ultraviolet beams and converting them into negative form. CONSTITUTION:The positive type resist 402 consisting of a quinone azide group compound and phenol resin is applied to the semiconductor substrate 401, and the conforming marks 403 with eyes at the corners of a chip pattern 404 are irradiated by charged particle beams and the positions of the marks are detected. The intensity of the particle beams shall be 10<-4>C/cm<2> from 10<-5>C/cm<2>. The conforming marks 403 with eyes and the circumferences 503 are exposed by particle beams having intensity in the same extent, the ultraviolet irradiation of 60mJ/cm<2>-200mJ/cm<2> is conducted by using a high-pressure mercury-arc lamp, and the surface is developed. Accordingly, a section to which the charged particle beams are irradiated is melted, but the resist is left because the sections 503 to which the charged particle beams and ultraviolet rays are irradiated are converted into negative form, and the conforming marks 403 with eyes are protected.
JP56069012A 1981-05-08 1981-05-08 Protective method for conforming mark with eye in manufacture of semiconductor device Granted JPS57184220A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56069012A JPS57184220A (en) 1981-05-08 1981-05-08 Protective method for conforming mark with eye in manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56069012A JPS57184220A (en) 1981-05-08 1981-05-08 Protective method for conforming mark with eye in manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57184220A true JPS57184220A (en) 1982-11-12
JPH0328052B2 JPH0328052B2 (en) 1991-04-17

Family

ID=13390244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56069012A Granted JPS57184220A (en) 1981-05-08 1981-05-08 Protective method for conforming mark with eye in manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57184220A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104205316A (en) * 2012-04-27 2014-12-10 富士电机株式会社 Semiconductor device manufacturing method and manufacturing device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104205316A (en) * 2012-04-27 2014-12-10 富士电机株式会社 Semiconductor device manufacturing method and manufacturing device

Also Published As

Publication number Publication date
JPH0328052B2 (en) 1991-04-17

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