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JPS57178317A - Manufacture of semiconductor single crystal - Google Patents

Manufacture of semiconductor single crystal

Info

Publication number
JPS57178317A
JPS57178317A JP6256681A JP6256681A JPS57178317A JP S57178317 A JPS57178317 A JP S57178317A JP 6256681 A JP6256681 A JP 6256681A JP 6256681 A JP6256681 A JP 6256681A JP S57178317 A JPS57178317 A JP S57178317A
Authority
JP
Japan
Prior art keywords
oxide
sio2
single crystal
gas
oxygen gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6256681A
Other languages
Japanese (ja)
Other versions
JPS6152971B2 (en
Inventor
Yukinobu Shinoda
Nobuo Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6256681A priority Critical patent/JPS57178317A/en
Publication of JPS57178317A publication Critical patent/JPS57178317A/en
Publication of JPS6152971B2 publication Critical patent/JPS6152971B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/029—Graded interfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To permit the growth of a good single crystal semiconductor even on a glass-shaped amorphous substrate by a method wherein the oxide in semiconductor components is grown to continuously grow the oxide gradually decreased the oxygen component in the oxide and the semiconductor component only is finally grown. CONSTITUTION:Valves 41, 42, 43 are opened to form SiO2 on an SiO2 substrate 1 and silane gas diluted by 4% of nitrogen, nitrogen gas and oxygen gas are flowed. After growing an SiO2 film, the valve 43 is gradually closed to decrease the oxygen gas. After the supply of the oxygen gas has been stopped, substrate temperature is increased. Furthermore, crystal is annealed in H2.
JP6256681A 1981-04-27 1981-04-27 Manufacture of semiconductor single crystal Granted JPS57178317A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6256681A JPS57178317A (en) 1981-04-27 1981-04-27 Manufacture of semiconductor single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6256681A JPS57178317A (en) 1981-04-27 1981-04-27 Manufacture of semiconductor single crystal

Publications (2)

Publication Number Publication Date
JPS57178317A true JPS57178317A (en) 1982-11-02
JPS6152971B2 JPS6152971B2 (en) 1986-11-15

Family

ID=13203961

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6256681A Granted JPS57178317A (en) 1981-04-27 1981-04-27 Manufacture of semiconductor single crystal

Country Status (1)

Country Link
JP (1) JPS57178317A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59104119A (en) * 1982-12-07 1984-06-15 Fujitsu Ltd Manufacture of semiconductor device
JPS63228625A (en) * 1987-03-18 1988-09-22 Toshiba Corp Apparatus and method for depositing thin film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59104119A (en) * 1982-12-07 1984-06-15 Fujitsu Ltd Manufacture of semiconductor device
JPS63228625A (en) * 1987-03-18 1988-09-22 Toshiba Corp Apparatus and method for depositing thin film

Also Published As

Publication number Publication date
JPS6152971B2 (en) 1986-11-15

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