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JPS57160124A - Manufacture of thin film material - Google Patents

Manufacture of thin film material

Info

Publication number
JPS57160124A
JPS57160124A JP56045559A JP4555981A JPS57160124A JP S57160124 A JPS57160124 A JP S57160124A JP 56045559 A JP56045559 A JP 56045559A JP 4555981 A JP4555981 A JP 4555981A JP S57160124 A JPS57160124 A JP S57160124A
Authority
JP
Japan
Prior art keywords
thin film
hydrogen
temperature
substrate
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56045559A
Other languages
Japanese (ja)
Other versions
JPH0652714B2 (en
Inventor
Juichi Shimada
Yoshifumi Katayama
Yasuhiro Shiraki
Eiichi Maruyama
Hirokazu Matsubara
Akitoshi Ishizaka
Yoshimasa Murayama
Akira Shintani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56045559A priority Critical patent/JPH0652714B2/en
Publication of JPS57160124A publication Critical patent/JPS57160124A/en
Publication of JPH0652714B2 publication Critical patent/JPH0652714B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Treatment with charged particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To diffuse hydrogen in a thin film by a method wherein a heat treatment by hydrogen is provided for a semiconductor thin film formed on a substrate and the heat treatment is continued while cooling gradually the substrate. CONSTITUTION:A substrate 5 is provided within a vacuum vessel 1, aftr the exhaust within the vessel 1 has been performed upto the pressure of 2X10<-10> Torrs substantially, the silicon is caused to evaporate through an electron beam evaporation source 3 to form a silicon thin film on a substrate 5. Subsequently, hydrogen is supplied at 0.04Torrs from a hydrogen supplying unit 8 after the thin film has been heated 400-600 deg.C. Then, a hydrogen plasma is formed by using a high frequency electrode 6. After said temperature has been maintained for approx. ten minutes, the temperature is lowered to 200 deg.C approximately in the lowering temperature of about 0.5-10.0 deg.C/min to shutout a high frequency input. The hydrogen is introduced into the thin film at the high temperature and is bonded in a weak bonding position while lowering the temperature gradually.
JP56045559A 1981-03-30 1981-03-30 Thin film material manufacturing method Expired - Lifetime JPH0652714B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56045559A JPH0652714B2 (en) 1981-03-30 1981-03-30 Thin film material manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56045559A JPH0652714B2 (en) 1981-03-30 1981-03-30 Thin film material manufacturing method

Publications (2)

Publication Number Publication Date
JPS57160124A true JPS57160124A (en) 1982-10-02
JPH0652714B2 JPH0652714B2 (en) 1994-07-06

Family

ID=12722711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56045559A Expired - Lifetime JPH0652714B2 (en) 1981-03-30 1981-03-30 Thin film material manufacturing method

Country Status (1)

Country Link
JP (1) JPH0652714B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59228932A (en) * 1983-06-09 1984-12-22 Fujitsu Ltd Vapor growth device
JPH04321277A (en) * 1991-04-19 1992-11-11 Sanyo Electric Co Ltd Formation of amorphous silicon thin film and manufacture of photoelectromotive device using the same
JPH06268240A (en) * 1993-03-10 1994-09-22 Hitachi Ltd Thin-film solar cell and manufacture thereof
US6258173B1 (en) 1998-01-29 2001-07-10 Nissin Electric Co. Ltd. Film forming apparatus for forming a crystalline silicon film
JP2010034580A (en) * 2003-10-20 2010-02-12 Tokyo Electron Ltd Film forming apparatus and method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPL.PHYS.LETT=1978 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59228932A (en) * 1983-06-09 1984-12-22 Fujitsu Ltd Vapor growth device
JPH04321277A (en) * 1991-04-19 1992-11-11 Sanyo Electric Co Ltd Formation of amorphous silicon thin film and manufacture of photoelectromotive device using the same
JPH06268240A (en) * 1993-03-10 1994-09-22 Hitachi Ltd Thin-film solar cell and manufacture thereof
US6258173B1 (en) 1998-01-29 2001-07-10 Nissin Electric Co. Ltd. Film forming apparatus for forming a crystalline silicon film
JP2010034580A (en) * 2003-10-20 2010-02-12 Tokyo Electron Ltd Film forming apparatus and method

Also Published As

Publication number Publication date
JPH0652714B2 (en) 1994-07-06

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