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JPS57152168A - Manufacture of schottky barrier gate field effect transistor - Google Patents

Manufacture of schottky barrier gate field effect transistor

Info

Publication number
JPS57152168A
JPS57152168A JP56036986A JP3698681A JPS57152168A JP S57152168 A JPS57152168 A JP S57152168A JP 56036986 A JP56036986 A JP 56036986A JP 3698681 A JP3698681 A JP 3698681A JP S57152168 A JPS57152168 A JP S57152168A
Authority
JP
Japan
Prior art keywords
film
source
alloys
metal
schottky barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56036986A
Other languages
Japanese (ja)
Other versions
JPH0212015B2 (en
Inventor
Keiichi Ohata
Tsutomu Tsuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56036986A priority Critical patent/JPS57152168A/en
Publication of JPS57152168A publication Critical patent/JPS57152168A/en
Publication of JPH0212015B2 publication Critical patent/JPH0212015B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To reduce the gate resistance manufacturing the GaAs Schottky barrier gate FET by a method wherein a gate electrode and an N<+> region of source and drain are subjected implantation making use of self-alignment process. CONSTITUTION:The first metallic film 41 containing a metal such as Nb, Mo, W and the like or the alloys thereof or the other alloys containing 20atm% or less of a metal such as Ti, Cr, Zr and the like in addition to the said metals or alloys is formed on an N type channel layer 12 formed on a high resistant GaAs substrate 11 and the second metallic layer 42 is formed on the said film 41 into the size larger than that of the film 41 while the ion 43 of the donor impurity is implanted in the source and drain regions 44 and 45. Then the surface is annealed through the intermediary of the surface protecting film 46 to activate the implanted ion forming the N<+> regions 13 and 14. Next the surface protecting film 46 is removed and the first metal layer 41 is side etched faster than the second metal layer 42 to form the gate electrode 15 and further the source and drain electrodes 16 and 17.
JP56036986A 1981-03-13 1981-03-13 Manufacture of schottky barrier gate field effect transistor Granted JPS57152168A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56036986A JPS57152168A (en) 1981-03-13 1981-03-13 Manufacture of schottky barrier gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56036986A JPS57152168A (en) 1981-03-13 1981-03-13 Manufacture of schottky barrier gate field effect transistor

Publications (2)

Publication Number Publication Date
JPS57152168A true JPS57152168A (en) 1982-09-20
JPH0212015B2 JPH0212015B2 (en) 1990-03-16

Family

ID=12485066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56036986A Granted JPS57152168A (en) 1981-03-13 1981-03-13 Manufacture of schottky barrier gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS57152168A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6081872A (en) * 1983-10-11 1985-05-09 Oki Electric Ind Co Ltd Method for manufacturing semiconductor devices
JPS60115268A (en) * 1983-11-28 1985-06-21 Fujitsu Ltd Manufacture of semiconductor device
JPS6143481A (en) * 1984-08-08 1986-03-03 Oki Electric Ind Co Ltd Manufacturing method of shot-gate field effect transistor
JPS6155966A (en) * 1984-08-27 1986-03-20 Oki Electric Ind Co Ltd Method for manufacturing compound semiconductor devices
FR2682534A1 (en) * 1991-10-14 1993-04-16 Mitsubishi Electric Corp SEMICONDUCTOR DEVICE HAVING A STACK OF GRID ELECTRODE SECTIONS, AND METHOD FOR MANUFACTURING THE DEVICE.

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6081872A (en) * 1983-10-11 1985-05-09 Oki Electric Ind Co Ltd Method for manufacturing semiconductor devices
JPS60115268A (en) * 1983-11-28 1985-06-21 Fujitsu Ltd Manufacture of semiconductor device
JPS6143481A (en) * 1984-08-08 1986-03-03 Oki Electric Ind Co Ltd Manufacturing method of shot-gate field effect transistor
JPS6155966A (en) * 1984-08-27 1986-03-20 Oki Electric Ind Co Ltd Method for manufacturing compound semiconductor devices
FR2682534A1 (en) * 1991-10-14 1993-04-16 Mitsubishi Electric Corp SEMICONDUCTOR DEVICE HAVING A STACK OF GRID ELECTRODE SECTIONS, AND METHOD FOR MANUFACTURING THE DEVICE.
US5384479A (en) * 1991-10-14 1995-01-24 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with T-shaped gate electrode
US5462884A (en) * 1991-10-14 1995-10-31 Mitsubishi Denki Kabushiki Kaisha Method of making field effect transistor with T-shaped gate electrode

Also Published As

Publication number Publication date
JPH0212015B2 (en) 1990-03-16

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