[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JPS57152132A - Chemical vapor growing method - Google Patents

Chemical vapor growing method

Info

Publication number
JPS57152132A
JPS57152132A JP3638281A JP3638281A JPS57152132A JP S57152132 A JPS57152132 A JP S57152132A JP 3638281 A JP3638281 A JP 3638281A JP 3638281 A JP3638281 A JP 3638281A JP S57152132 A JPS57152132 A JP S57152132A
Authority
JP
Japan
Prior art keywords
treated
plasma
substrates
films
silicon nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3638281A
Other languages
English (en)
Other versions
JPS6313343B2 (ja
Inventor
Yoshimi Shiotani
Kanetake Takasaki
Mamoru Maeda
Mikio Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3638281A priority Critical patent/JPS57152132A/ja
Publication of JPS57152132A publication Critical patent/JPS57152132A/ja
Publication of JPS6313343B2 publication Critical patent/JPS6313343B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP3638281A 1981-03-13 1981-03-13 Chemical vapor growing method Granted JPS57152132A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3638281A JPS57152132A (en) 1981-03-13 1981-03-13 Chemical vapor growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3638281A JPS57152132A (en) 1981-03-13 1981-03-13 Chemical vapor growing method

Publications (2)

Publication Number Publication Date
JPS57152132A true JPS57152132A (en) 1982-09-20
JPS6313343B2 JPS6313343B2 (ja) 1988-03-25

Family

ID=12468291

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3638281A Granted JPS57152132A (en) 1981-03-13 1981-03-13 Chemical vapor growing method

Country Status (1)

Country Link
JP (1) JPS57152132A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279448A (en) * 1975-12-25 1977-07-04 Toyota Motor Corp Fixing device for tiltable handwheel
JPS5996736A (ja) * 1982-11-26 1984-06-04 Hitachi Ltd 半導体装置
JPS61145834A (ja) * 1984-12-20 1986-07-03 Toshiba Corp 半導体装置の製造方法
JPS61256735A (ja) * 1985-05-10 1986-11-14 Nec Corp 半導体装置及びその製造方法
JPS62166530A (ja) * 1986-01-20 1987-07-23 Toshiba Corp 半導体装置の製造方法
JPS6449234A (en) * 1987-08-20 1989-02-23 Nec Corp Semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SOLID-STATE SCIENCE AND TECHNOLOGY=1977 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279448A (en) * 1975-12-25 1977-07-04 Toyota Motor Corp Fixing device for tiltable handwheel
JPS5526028B2 (ja) * 1975-12-25 1980-07-10
JPS5996736A (ja) * 1982-11-26 1984-06-04 Hitachi Ltd 半導体装置
JPS61145834A (ja) * 1984-12-20 1986-07-03 Toshiba Corp 半導体装置の製造方法
JPS61256735A (ja) * 1985-05-10 1986-11-14 Nec Corp 半導体装置及びその製造方法
JPS62166530A (ja) * 1986-01-20 1987-07-23 Toshiba Corp 半導体装置の製造方法
JPS6449234A (en) * 1987-08-20 1989-02-23 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPS6313343B2 (ja) 1988-03-25

Similar Documents

Publication Publication Date Title
US5607722A (en) Process for titanium nitride deposition using five-and six-coordinate titanium complexes
ES8500874A1 (es) Un procedimiento para depositar sobre un substrato de vidriocalentado una pelicula de control solar transparente, absorbente y reflectante.
TW352457B (en) Chemical vapor phase growth apparatus (3)
US5360646A (en) Chemical vapor deposition method of silicon dioxide film
TW362118B (en) Method for depositing amorphous SiNC coatings
US4250205A (en) Process for depositing a III-V semi-conductor layer on a substrate
EP0174743A3 (en) Process for transition metal nitrides thin film deposition
KR940004714A (ko) 화학증착에 의한 과포화 희토류 원소 도핑 반도체층
ATE27186T1 (de) Verfahren zur herstellung von amorphen halbleitenden legierungen und von anordnungen mittels mikrowellenenergie.
KR950006035A (ko) 저온에서 결정성 탄화규소 피막을 형성시킨 방법
EP0164928A3 (en) Vertical hot wall cvd reactor
JPS57152132A (en) Chemical vapor growing method
ES8401680A1 (es) "un metodo de fabricacion de una pila solar".
KR101546319B1 (ko) 텅스텐 함유 막을 증착시키기 위한 텅스텐 전구체 및 이를 포함하는 텅스텐 함유 필름 증착방법
Kaneko et al. Epitaxial growth of A1N film by low-pressure MOCVD in gas-beam-flow reactor
US4945857A (en) Plasma formation of hydride compounds
EP0423884A1 (en) Method for deposition of silicon nitride layers on glass substrates
MY110288A (en) Process for forming deposited film and process for preparing semiconductor device.
Hoffman et al. Plasma enhanced chemical vapor deposition of silicon nitride films from a metal-organic precursor
EP0204724B1 (en) Method for deposition of gallium arsenide from vapor phase gallium-arsenic complexes
JPS57194521A (en) Manufacture of thin film semiconductor
ES466902A1 (es) Un metodo para formar una pelicula de fosforo-nitrogeno-oxi-geno.
JPS5648237A (en) Evacuated gaseous phase reactor
EP0245600B1 (en) Process for the plasma synthesis of hydride compounds and apparatus for carrying out said process
JPH04215421A (ja) 化学的気相成長法