JPS57147616A - Formation of substrate for liquid crystal cell - Google Patents
Formation of substrate for liquid crystal cellInfo
- Publication number
- JPS57147616A JPS57147616A JP3225281A JP3225281A JPS57147616A JP S57147616 A JPS57147616 A JP S57147616A JP 3225281 A JP3225281 A JP 3225281A JP 3225281 A JP3225281 A JP 3225281A JP S57147616 A JPS57147616 A JP S57147616A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- thin film
- insulation characteristic
- film
- characteristic thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To make the sticking of an insulation characteristic thin film formed on an org. high polymer mask having hydroxyl groups of epoxy type and methacrylic type thin and easy to penetrate by using said mask and making the film on the mask exceedingly thick. CONSTITUTION:In the stage of forming an insulation characteristic thin film 6 on a glass plate provided with transparent conductive films 2 and a part of the said transparent conductive films, the areas where the formation of the insulation characteristic thin film are not required beforehand formed with an org. high polymer mask 7 having hydroxyl groups of epoxy type and methacrylate ester, and the mark is so formed that particularly in the sealing parts the insulation characteristic thin film is extended to the 1/3-1/2 area of the width of the sealing part. The film thickness of the mask is set at 10-100mum, and the insulation characteristic thin film is formed thereon to 800-2,000Angstrom film thicknesses. After this is calcined temporarily at 140-180 deg.C, the mask is swollen and dissolved with methylene chloride or trichloroethylene, and is ultrasonically treated in a triethane soln., whereby the mask is stripped off.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3225281A JPS57147616A (en) | 1981-03-06 | 1981-03-06 | Formation of substrate for liquid crystal cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3225281A JPS57147616A (en) | 1981-03-06 | 1981-03-06 | Formation of substrate for liquid crystal cell |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57147616A true JPS57147616A (en) | 1982-09-11 |
JPH035564B2 JPH035564B2 (en) | 1991-01-25 |
Family
ID=12353818
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3225281A Granted JPS57147616A (en) | 1981-03-06 | 1981-03-06 | Formation of substrate for liquid crystal cell |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57147616A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6177032A (en) * | 1984-09-25 | 1986-04-19 | Seikosha Co Ltd | Production of liquid crystal panel substrate |
JP2011081179A (en) * | 2009-10-07 | 2011-04-21 | Lg Display Co Ltd | Method for forming liquid crystal alignment layer |
-
1981
- 1981-03-06 JP JP3225281A patent/JPS57147616A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6177032A (en) * | 1984-09-25 | 1986-04-19 | Seikosha Co Ltd | Production of liquid crystal panel substrate |
JP2011081179A (en) * | 2009-10-07 | 2011-04-21 | Lg Display Co Ltd | Method for forming liquid crystal alignment layer |
Also Published As
Publication number | Publication date |
---|---|
JPH035564B2 (en) | 1991-01-25 |
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