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JPS57124430A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57124430A
JPS57124430A JP919581A JP919581A JPS57124430A JP S57124430 A JPS57124430 A JP S57124430A JP 919581 A JP919581 A JP 919581A JP 919581 A JP919581 A JP 919581A JP S57124430 A JPS57124430 A JP S57124430A
Authority
JP
Japan
Prior art keywords
electrode material
irradiated
light
semiconductor substrate
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP919581A
Other languages
Japanese (ja)
Inventor
Kazuo Nishiyama
Michio Arai
Hideharu Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP919581A priority Critical patent/JPS57124430A/en
Publication of JPS57124430A publication Critical patent/JPS57124430A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To shorten the processing time of sintering as well as to prevent the punch-through of the electrode material for the subject semiconductor device by a method wherein infrared rays are irradiated on the main surface of the semiconductor substrate whereon an electrode material was evaporated. CONSTITUTION:The electrode material such as aluminum and the like is evaporated on the main surface of the semiconductor substrate 1, and after patterning is performed, the substrate is arranged in a quartz pipe 2. Infrared ray lamp devices (tungsten lamp, for example) 4 are arranged at the upper and the lower parts on the outside of the quartz pipe 2, and an incoherent beam of light with a wavelength range of 0.4-4.0mum is irradiated from the lamp device 4. This irradiated beam of light is reflected by a parabolic reflecting mirror 5, and uniformly irradiated on the semiconductor substrate 1. A high-temperature and short-time heat treatment is performed by heating up the electrode material with the irradiated beam of light. Accordingly, the diffusing into the semiconductor of the electrode material can be suppressed, and an excellent ohmic contact having no punch-through can be obtained for a shallow junction too.
JP919581A 1981-01-23 1981-01-23 Manufacture of semiconductor device Pending JPS57124430A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP919581A JPS57124430A (en) 1981-01-23 1981-01-23 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP919581A JPS57124430A (en) 1981-01-23 1981-01-23 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57124430A true JPS57124430A (en) 1982-08-03

Family

ID=11713722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP919581A Pending JPS57124430A (en) 1981-01-23 1981-01-23 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57124430A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6063926A (en) * 1983-08-31 1985-04-12 Fujitsu Ltd Manufacture of semiconductor device
JPS6312132A (en) * 1986-07-03 1988-01-19 Sony Corp Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52146559A (en) * 1976-05-31 1977-12-06 Nippon Telegr & Teleph Corp <Ntt> Electrode forming method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52146559A (en) * 1976-05-31 1977-12-06 Nippon Telegr & Teleph Corp <Ntt> Electrode forming method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6063926A (en) * 1983-08-31 1985-04-12 Fujitsu Ltd Manufacture of semiconductor device
JPS6312132A (en) * 1986-07-03 1988-01-19 Sony Corp Manufacture of semiconductor device

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