[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JPS5710958A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5710958A
JPS5710958A JP8602680A JP8602680A JPS5710958A JP S5710958 A JPS5710958 A JP S5710958A JP 8602680 A JP8602680 A JP 8602680A JP 8602680 A JP8602680 A JP 8602680A JP S5710958 A JPS5710958 A JP S5710958A
Authority
JP
Japan
Prior art keywords
main electrode
upper main
center
semiconductor chips
recess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8602680A
Other languages
Japanese (ja)
Inventor
Hideaki Sannomiya
Yuusaku Morimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP8602680A priority Critical patent/JPS5710958A/en
Publication of JPS5710958A publication Critical patent/JPS5710958A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To obtain a semiconductor device of large current capacity, by a method wherein the upper main electrode is secured to the recess provided in the center of the lower main electrode through an insulating mount, and a plurality of semiconductor chips are conductively secured onto the lower main electrode so as to surround said upper main electrode. CONSTITUTION:A recess 12 is provided in the center of a lower main electrode 2, and an upper main electrode 1 is secured to said recess 12 through an insulating mount 3. A plurality of semiconductor chips 5 such as transistors, thyristors or the like are soldered onto the lower main electrode 2 in an approximate circumference shape with the upper main electrode 1 as a center. On the periphery of the arrangement of said semiconductor chips 5, a control electrode 7 is provided through an insulating mount 8 so as to be concentric therewith with the upper main electrode 1 as a center. Each semiconductor chip 5 is connected with both the upper main electrode 1 and the control electrode 7 through metal wires 6 and 9 respectively. Thereby, an excellent current balance is obtained among the respective semiconductor chips 5 without any increase in dimension in the heightwise direction. Accordingly, it is possible to obtain a semiconductor device of large current capacity and without any uneven distribution of heat.
JP8602680A 1980-06-25 1980-06-25 Semiconductor device Pending JPS5710958A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8602680A JPS5710958A (en) 1980-06-25 1980-06-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8602680A JPS5710958A (en) 1980-06-25 1980-06-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5710958A true JPS5710958A (en) 1982-01-20

Family

ID=13875140

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8602680A Pending JPS5710958A (en) 1980-06-25 1980-06-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5710958A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0645814A3 (en) * 1993-09-07 1995-09-20 Delco Electronics Corp Semiconductor power switching device module.
WO1998019340A1 (en) * 1996-10-31 1998-05-07 Siemens Aktiengesellschaft Large-area high-current module of a field-controlled interruptible power semiconductor switch

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0645814A3 (en) * 1993-09-07 1995-09-20 Delco Electronics Corp Semiconductor power switching device module.
WO1998019340A1 (en) * 1996-10-31 1998-05-07 Siemens Aktiengesellschaft Large-area high-current module of a field-controlled interruptible power semiconductor switch

Similar Documents

Publication Publication Date Title
EP0378209A3 (en) Hybrid resin-sealed semiconductor device
JPS5710958A (en) Semiconductor device
DE3368812D1 (en) Method of producing metal electrodes of diversing thiekness for semiconductor devices, especially for power semiconductor devices such as thyristors
JPS5762562A (en) Semiconductor device
JPS5710957A (en) Semiconductor device
GB1088139A (en) High current rectifier
JPS5730357A (en) Semiconductor device
JPS57181160A (en) Transistor
JPS5785244A (en) Semiconductor device
JPS5745940A (en) Semiconductor device
JPS5412263A (en) Semiconductor element and production of the same
JPS5779629A (en) Integrated circuit device
JPS5335472A (en) Production of semiconductor unit
JPS5623768A (en) Semiconductor device
JPS55148449A (en) Semiconductor device
JPS56116646A (en) Semiconductor device
JPS5749256A (en) High frequency transistor
JPS56142659A (en) Semiconductor device
GB1017423A (en) Improvements in semiconductor devices
JPS5717172A (en) Semiconductor device
JPS57164557A (en) Integrated circuit device
JPS5324270A (en) Semiconductor device
JPS57184226A (en) Semiconductor device
JPS57102061A (en) Cooling device for semiconductor
JPS642338A (en) Wafer-scale semiconductor integrate circuit