JPS5696657U - - Google Patents
Info
- Publication number
- JPS5696657U JPS5696657U JP17820279U JP17820279U JPS5696657U JP S5696657 U JPS5696657 U JP S5696657U JP 17820279 U JP17820279 U JP 17820279U JP 17820279 U JP17820279 U JP 17820279U JP S5696657 U JPS5696657 U JP S5696657U
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17820279U JPS5696657U (en) | 1979-12-21 | 1979-12-21 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17820279U JPS5696657U (en) | 1979-12-21 | 1979-12-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5696657U true JPS5696657U (en) | 1981-07-31 |
Family
ID=29688749
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17820279U Pending JPS5696657U (en) | 1979-12-21 | 1979-12-21 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5696657U (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5167076A (en) * | 1974-10-29 | 1976-06-10 | Raytheon Co | Denkaikokatoranjisutasochi |
JPS5356978A (en) * | 1976-10-29 | 1978-05-23 | Western Electric Co | High power microstructure gallium arsenide schottky barrier fet transistor device and method of producing same |
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1979
- 1979-12-21 JP JP17820279U patent/JPS5696657U/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5167076A (en) * | 1974-10-29 | 1976-06-10 | Raytheon Co | Denkaikokatoranjisutasochi |
JPS5356978A (en) * | 1976-10-29 | 1978-05-23 | Western Electric Co | High power microstructure gallium arsenide schottky barrier fet transistor device and method of producing same |