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JPS5681961A - Semiconductor junction capacitor - Google Patents

Semiconductor junction capacitor

Info

Publication number
JPS5681961A
JPS5681961A JP15800579A JP15800579A JPS5681961A JP S5681961 A JPS5681961 A JP S5681961A JP 15800579 A JP15800579 A JP 15800579A JP 15800579 A JP15800579 A JP 15800579A JP S5681961 A JPS5681961 A JP S5681961A
Authority
JP
Japan
Prior art keywords
region
type
layer
junction
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15800579A
Other languages
Japanese (ja)
Inventor
Mikio Haijima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15800579A priority Critical patent/JPS5681961A/en
Publication of JPS5681961A publication Critical patent/JPS5681961A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0777—Vertical bipolar transistor in combination with capacitors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To improve the withstand voltage of a junction capacity by forming a deep base region in an epitaxial layer grown on a semiconductor substrate and a shallow emitter region diposed within the base region, producing the end of a p-n junction at deep position from the surface of the epitaxial layer, and forming a base pickup region at the base region end. CONSTITUTION:An n<+> type buried region is diffused in a p type Si substrate, an n<-> type layer 1 is epitaxially grown in the entire surface including the buried region, the layer 1 is surrounded by a p<+> type rgion reaching the substrate, and the layer 1 is divided into insular state including the buried region. A deep p<+> type base region 2 is diffused in the layer 1 becoming insular state, a shallow n<+> type emitter region 3 is formed therein, and a p type base pickup region 6 is formed at the end of the p-n junction produced thereby. Thereafter, an insulating film is coated on the entire surface, a window is opened thereat, and electrodes 4, 7 are mounted at the regions 3, 6 respectively. Thus, one end B of the p-n junction produced with the regions 2, 3 is disposed deeply in the layer 1, thereby increasing the withstand voltage of the junction capacity.
JP15800579A 1979-12-07 1979-12-07 Semiconductor junction capacitor Pending JPS5681961A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15800579A JPS5681961A (en) 1979-12-07 1979-12-07 Semiconductor junction capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15800579A JPS5681961A (en) 1979-12-07 1979-12-07 Semiconductor junction capacitor

Publications (1)

Publication Number Publication Date
JPS5681961A true JPS5681961A (en) 1981-07-04

Family

ID=15662165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15800579A Pending JPS5681961A (en) 1979-12-07 1979-12-07 Semiconductor junction capacitor

Country Status (1)

Country Link
JP (1) JPS5681961A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61148861A (en) * 1984-12-21 1986-07-07 Toshiba Corp Capacitor structure of bipolar monolithic ic
US4868134A (en) * 1987-08-31 1989-09-19 Toko, Inc. Method of making a variable-capacitance diode device
US5661066A (en) * 1980-12-17 1997-08-26 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52103980A (en) * 1976-02-26 1977-08-31 Nec Corp Semiconductor integrated circuit device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52103980A (en) * 1976-02-26 1977-08-31 Nec Corp Semiconductor integrated circuit device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5661066A (en) * 1980-12-17 1997-08-26 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit
JPS61148861A (en) * 1984-12-21 1986-07-07 Toshiba Corp Capacitor structure of bipolar monolithic ic
US4868134A (en) * 1987-08-31 1989-09-19 Toko, Inc. Method of making a variable-capacitance diode device

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