JPS5679479A - Photoelectric conversion device - Google Patents
Photoelectric conversion deviceInfo
- Publication number
- JPS5679479A JPS5679479A JP15664079A JP15664079A JPS5679479A JP S5679479 A JPS5679479 A JP S5679479A JP 15664079 A JP15664079 A JP 15664079A JP 15664079 A JP15664079 A JP 15664079A JP S5679479 A JPS5679479 A JP S5679479A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- electrode
- work function
- type
- si3n4
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000007423 decrease Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To obtain a high photoelectric conversion efficiency by setting the first and second electrodes on one surface or one back surface of an Si-substrate via an insulating or semi-insulating film thereby differentiating a work function or a conductive type. CONSTITUTION:An insulating film of Si3N4, SiO2 or the like forms a semiconductive film of a lower nitride or oxide such as Si3N4-X, SiO2-X or the like on a dope or nondope Si-substrate. A positive electrode 12 and a negative electrode 11 are arranged thereon with a certain intervals. The electrode 12 is formed by Pt, Au or P type Si-layer having a large work function, while the electrode 11 is formed by Al, Be or an N type Si-layer having less than 4eV of work function. When the light 8 is irradiated according to this constitution, the generated electrons and positive holes are gathered to the electrodes 11 and 12 respectively within very short diffusion distances. Therefore, since the possibility of recoupling decreases, the photoelectric conversion efficiency increases.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15664079A JPS5679479A (en) | 1979-12-03 | 1979-12-03 | Photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15664079A JPS5679479A (en) | 1979-12-03 | 1979-12-03 | Photoelectric conversion device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3728580A Division JPS5679477A (en) | 1980-03-24 | 1980-03-24 | Photoelectric conversion device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5679479A true JPS5679479A (en) | 1981-06-30 |
| JPH0230190B2 JPH0230190B2 (en) | 1990-07-04 |
Family
ID=15632076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15664079A Granted JPS5679479A (en) | 1979-12-03 | 1979-12-03 | Photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5679479A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6190476A (en) * | 1984-10-09 | 1986-05-08 | Sanyo Electric Co Ltd | Photovoltaic device |
| JPH077174A (en) * | 1993-01-28 | 1995-01-10 | Gold Star Electron Co Ltd | Photodiode and preparation thereof |
| WO2011023603A3 (en) * | 2009-08-24 | 2011-11-03 | International Business Machines Corporation | Single and few-layer graphene based photodetecting devices |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04115388U (en) * | 1991-03-20 | 1992-10-13 | アイワ株式会社 | Recording real time display device |
-
1979
- 1979-12-03 JP JP15664079A patent/JPS5679479A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6190476A (en) * | 1984-10-09 | 1986-05-08 | Sanyo Electric Co Ltd | Photovoltaic device |
| JPH077174A (en) * | 1993-01-28 | 1995-01-10 | Gold Star Electron Co Ltd | Photodiode and preparation thereof |
| WO2011023603A3 (en) * | 2009-08-24 | 2011-11-03 | International Business Machines Corporation | Single and few-layer graphene based photodetecting devices |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0230190B2 (en) | 1990-07-04 |
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