JPS5667925A - Plasma etching method - Google Patents
Plasma etching methodInfo
- Publication number
- JPS5667925A JPS5667925A JP14376079A JP14376079A JPS5667925A JP S5667925 A JPS5667925 A JP S5667925A JP 14376079 A JP14376079 A JP 14376079A JP 14376079 A JP14376079 A JP 14376079A JP S5667925 A JPS5667925 A JP S5667925A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- plasma
- processed
- film
- equality
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001020 plasma etching Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 238000005530 etching Methods 0.000 abstract 6
- 238000006116 polymerization reaction Methods 0.000 abstract 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To improve reproducibility and equality of an etching volume by a method wherein a plasma polymerization material film is previously attached to an electrode surface facing to an etching material to be processed of a parallel and flat plate electrode type plasma etching system. CONSTITUTION:In order to form a plasma polymerization material film 8 on the surface of electrodes 2, 3 of a plasma etching system, a gas for formation of a plasma polymerization material in a state wherein an etching material to be processed is not placed, is introduced, and then, a high frequency voltage is applied to produce a plasma. After this film is formed, a material to be processed is introduced into the system to receive an etching. With this, reproducibility and equality of an etching volume is improved, thus, an etching smooth surface being obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14376079A JPS5667925A (en) | 1979-11-05 | 1979-11-05 | Plasma etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14376079A JPS5667925A (en) | 1979-11-05 | 1979-11-05 | Plasma etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5667925A true JPS5667925A (en) | 1981-06-08 |
Family
ID=15346378
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14376079A Pending JPS5667925A (en) | 1979-11-05 | 1979-11-05 | Plasma etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5667925A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5779620A (en) * | 1980-11-05 | 1982-05-18 | Mitsubishi Electric Corp | Plasma etching process |
US6815365B2 (en) | 1995-03-16 | 2004-11-09 | Hitachi, Ltd. | Plasma etching apparatus and plasma etching method |
-
1979
- 1979-11-05 JP JP14376079A patent/JPS5667925A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5779620A (en) * | 1980-11-05 | 1982-05-18 | Mitsubishi Electric Corp | Plasma etching process |
US6815365B2 (en) | 1995-03-16 | 2004-11-09 | Hitachi, Ltd. | Plasma etching apparatus and plasma etching method |
US7208422B2 (en) | 1995-03-16 | 2007-04-24 | Hitachi, Ltd. | Plasma processing method |
US7565879B2 (en) | 1995-03-16 | 2009-07-28 | Hitachi, Ltd | Plasma processing apparatus |
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