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JPS5660033A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5660033A
JPS5660033A JP13626979A JP13626979A JPS5660033A JP S5660033 A JPS5660033 A JP S5660033A JP 13626979 A JP13626979 A JP 13626979A JP 13626979 A JP13626979 A JP 13626979A JP S5660033 A JPS5660033 A JP S5660033A
Authority
JP
Japan
Prior art keywords
layer
film
wiring
gate electrode
silicon oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13626979A
Other languages
Japanese (ja)
Inventor
Yukio Takeuchi
Toru Mochizuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP13626979A priority Critical patent/JPS5660033A/en
Publication of JPS5660033A publication Critical patent/JPS5660033A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain a multilayer wiring structure capable of performing a high- speed movement of an element for the subject device by a method wherein the surface of the first layer electrode wiring, consisting of a cilicide of a high-melting- point metal, is turned to an insulating layer by performing an oxidation treatment and the second layer electrode wiring is formed in such way that a portion of which is superposed over the first layer electrode wiring. CONSTITUTION:A silicon oxidation film 2 is formed by oxidizing the surface of a P type Si substrate 1, an MoSi2 film 3 is coated on the above film 2 using the sputtering method and, in addition, a silicon oxidation film is deposited on the above film 3 using a CVD method. Then a selective etching is performed using a resist mask and the first layer gate electrode 3 is formed. Next, a silicon oxidation film 6 is formed on the surface of the substrate by performing an oxidation process and, at the same time, a silicon oxidation film 62 is formed on the side of the first layer gate electrode. Then an MoSi2 layer 7 is coated, a patterning is performed and the second gate electrode is provided. Hence, the electric resistance of the wiring layer is reduced and the high-speed performance of the element can be obtained.
JP13626979A 1979-10-22 1979-10-22 Manufacture of semiconductor device Pending JPS5660033A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13626979A JPS5660033A (en) 1979-10-22 1979-10-22 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13626979A JPS5660033A (en) 1979-10-22 1979-10-22 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5660033A true JPS5660033A (en) 1981-05-23

Family

ID=15171234

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13626979A Pending JPS5660033A (en) 1979-10-22 1979-10-22 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5660033A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63244863A (en) * 1987-03-31 1988-10-12 Seiko Instr & Electronics Ltd Semiconductor device
JPH02332A (en) * 1987-11-17 1990-01-05 Mitsubishi Electric Corp Charge transfer device and its manufacture
JPH04279036A (en) * 1991-01-08 1992-10-05 Nec Corp Electric charge transfer element and manufacture thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54127688A (en) * 1978-03-28 1979-10-03 Cho Lsi Gijutsu Kenkyu Kumiai Method of fabricating semiconductor
JPS54132176A (en) * 1978-04-05 1979-10-13 Cho Lsi Gijutsu Kenkyu Kumiai Method of fabricating semiconductor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54127688A (en) * 1978-03-28 1979-10-03 Cho Lsi Gijutsu Kenkyu Kumiai Method of fabricating semiconductor
JPS54132176A (en) * 1978-04-05 1979-10-13 Cho Lsi Gijutsu Kenkyu Kumiai Method of fabricating semiconductor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63244863A (en) * 1987-03-31 1988-10-12 Seiko Instr & Electronics Ltd Semiconductor device
JPH02332A (en) * 1987-11-17 1990-01-05 Mitsubishi Electric Corp Charge transfer device and its manufacture
JPH04279036A (en) * 1991-01-08 1992-10-05 Nec Corp Electric charge transfer element and manufacture thereof

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