JPS5654036A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5654036A JPS5654036A JP13065279A JP13065279A JPS5654036A JP S5654036 A JPS5654036 A JP S5654036A JP 13065279 A JP13065279 A JP 13065279A JP 13065279 A JP13065279 A JP 13065279A JP S5654036 A JPS5654036 A JP S5654036A
- Authority
- JP
- Japan
- Prior art keywords
- film
- poly
- substrate
- impurities
- rediffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 5
- 239000012535 impurity Substances 0.000 abstract 4
- 239000013078 crystal Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000000155 melt Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To conduct diffusion without rediffusion from the semiconductor substrate while changing the quality of a poly Si film and utilize the film as internal wiring by a method wherein laser rays having high output and high energy are irradiated to the poly Si film containing impurities. CONSTITUTION:An SiO2 film 2 on a P type Si substrate 1 is opened, and a poly Si film 3 containing impurities 4 is deposited at the thickness of about several thousand Angstrom . When irradiating the laser rays of several joule/cm<2>, temperature of the poly Si reaches about 1,200 deg.C, the impurities diffuse into the substrate, and a layer 6 is formed. The film 4 often melts, and recrystallizes in an opening portion and is changed into a monocrystal Si film, crystal grains greatly grow portions except the opening portion, impurities caught by crystal grain baundaries are taken into the crystal grains, and resistivity remarkably lowers. Rediffusion from the substrate side is not generated at all because a temperature of the Si substrate hardly rises at that time. Thus, the poly Si film used as a diffusion source can further be utilized as an electrode and internal wiring.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13065279A JPS5654036A (en) | 1979-10-08 | 1979-10-08 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13065279A JPS5654036A (en) | 1979-10-08 | 1979-10-08 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5654036A true JPS5654036A (en) | 1981-05-13 |
Family
ID=15039364
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13065279A Pending JPS5654036A (en) | 1979-10-08 | 1979-10-08 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5654036A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4947630A (en) * | 1972-06-05 | 1974-05-08 |
-
1979
- 1979-10-08 JP JP13065279A patent/JPS5654036A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4947630A (en) * | 1972-06-05 | 1974-05-08 |
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