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JPS5650535A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5650535A
JPS5650535A JP12539179A JP12539179A JPS5650535A JP S5650535 A JPS5650535 A JP S5650535A JP 12539179 A JP12539179 A JP 12539179A JP 12539179 A JP12539179 A JP 12539179A JP S5650535 A JPS5650535 A JP S5650535A
Authority
JP
Japan
Prior art keywords
layer
interconnecting wiring
thereafter
wiring
reducing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12539179A
Other languages
Japanese (ja)
Inventor
Shinji Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12539179A priority Critical patent/JPS5650535A/en
Publication of JPS5650535A publication Critical patent/JPS5650535A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a high density semiconductor device by employing two wiring layers of a polysilicon layer and a molybdenum layer for the interconnecting wiring of CMOS type ICs, reducing the sizes of the interconnecting wiring layer, and also reducing the resistance of the interconnecting wiring. CONSTITUTION:A P type well 11, a field oxide film 12, a gate insulating film 13 are formed on a semiconductor substrate 10. Then, a drain contacting hole is formed and a polysilicon layer 15 is formed on all the surface. Thereafter, an SiO2 film is selectively formed, impurities are doped, and drain contacts 26 and 27 are formed, respectively. Then, the SiO2 film is removed, molibdenum layer 18c is formed, and gate layers 15a and 18a and an interconnecting wiring layer are formed by selective etching. Thereafter, a mask layer wherein a hole is provided at the specified portion of the transistor is formed, and source and drain regions are self-aligningly formed by the ion implantation method.
JP12539179A 1979-10-01 1979-10-01 Manufacture of semiconductor device Pending JPS5650535A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12539179A JPS5650535A (en) 1979-10-01 1979-10-01 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12539179A JPS5650535A (en) 1979-10-01 1979-10-01 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5650535A true JPS5650535A (en) 1981-05-07

Family

ID=14908973

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12539179A Pending JPS5650535A (en) 1979-10-01 1979-10-01 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5650535A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57192079A (en) * 1981-05-22 1982-11-26 Hitachi Ltd Semiconductor device
JPS592363A (en) * 1982-06-09 1984-01-07 テキサス・インスツルメンツ・インコ−ポレイテツド Complementary insulated gate field effect device
JPS5957469A (en) * 1982-09-28 1984-04-03 Fujitsu Ltd Semiconductor device
JPS59115554A (en) * 1982-12-22 1984-07-04 Toshiba Corp Semiconductor device and manufacture thereof
JPS59119863A (en) * 1982-12-27 1984-07-11 Seiko Epson Corp Semiconductor device
JPS60210863A (en) * 1984-01-10 1985-10-23 エス・ジ−・エス−アテス・コンポネンチ・エレツトロニシ・ソシエタ・ペル・アチオニ Complementary mos integrated circuit and method of producingsame
JPH01217945A (en) * 1988-02-26 1989-08-31 Toshiba Corp Manufacture of semiconductor device
JPH01303748A (en) * 1988-05-31 1989-12-07 Yamaha Corp Integrated circuit device and manufacture thereof
JPH02246362A (en) * 1989-03-20 1990-10-02 Takehide Shirato Semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51130183A (en) * 1975-05-06 1976-11-12 Matsushita Electric Ind Co Ltd Semiconductor ic and its process
JPS5261960A (en) * 1975-11-18 1977-05-21 Fujitsu Ltd Production of semiconductor device
JPS54112184A (en) * 1978-02-22 1979-09-01 Seiko Epson Corp Semiconductor integrated-circuit device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51130183A (en) * 1975-05-06 1976-11-12 Matsushita Electric Ind Co Ltd Semiconductor ic and its process
JPS5261960A (en) * 1975-11-18 1977-05-21 Fujitsu Ltd Production of semiconductor device
JPS54112184A (en) * 1978-02-22 1979-09-01 Seiko Epson Corp Semiconductor integrated-circuit device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57192079A (en) * 1981-05-22 1982-11-26 Hitachi Ltd Semiconductor device
JPS592363A (en) * 1982-06-09 1984-01-07 テキサス・インスツルメンツ・インコ−ポレイテツド Complementary insulated gate field effect device
JPS5957469A (en) * 1982-09-28 1984-04-03 Fujitsu Ltd Semiconductor device
JPS59115554A (en) * 1982-12-22 1984-07-04 Toshiba Corp Semiconductor device and manufacture thereof
JPH0348664B2 (en) * 1982-12-22 1991-07-25 Tokyo Shibaura Electric Co
JPS59119863A (en) * 1982-12-27 1984-07-11 Seiko Epson Corp Semiconductor device
JPS60210863A (en) * 1984-01-10 1985-10-23 エス・ジ−・エス−アテス・コンポネンチ・エレツトロニシ・ソシエタ・ペル・アチオニ Complementary mos integrated circuit and method of producingsame
JPH01217945A (en) * 1988-02-26 1989-08-31 Toshiba Corp Manufacture of semiconductor device
JPH01303748A (en) * 1988-05-31 1989-12-07 Yamaha Corp Integrated circuit device and manufacture thereof
JPH02246362A (en) * 1989-03-20 1990-10-02 Takehide Shirato Semiconductor device

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