JPS5632722A - Ion implanting apparatus - Google Patents
Ion implanting apparatusInfo
- Publication number
- JPS5632722A JPS5632722A JP10722579A JP10722579A JPS5632722A JP S5632722 A JPS5632722 A JP S5632722A JP 10722579 A JP10722579 A JP 10722579A JP 10722579 A JP10722579 A JP 10722579A JP S5632722 A JPS5632722 A JP S5632722A
- Authority
- JP
- Japan
- Prior art keywords
- slit
- electromagnet
- strength
- magnetic field
- specific type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000002500 ions Chemical class 0.000 abstract 3
- 230000002596 correlated effect Effects 0.000 abstract 1
- 239000007943 implant Substances 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 238000010884 ion-beam technique Methods 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To implant ions highly accurately by moving the position of a collector slit in response to the variation of the strength of the magnetic field of the electromagnet which is used for mass separation. CONSTITUTION:An ion beam 2, which is generated in an ion source 1, is accelerated, and is separated by a mass seperating electromagnet 3. The beam 2 of the only specific type of the ions passes a slit 4. If the strength of the magnetic field of the electromagnet 3 is slowly varied, the beam 2 moves laterally. If the slit 4 is moved at the same time, only the specific type of beam can be always passed. When the specific type of beam which has passed the slit in this way strikes the disk 8 which is rotating at a specified location, the beam scans targets 7 which are arranged at the location whose rotating diameter is the same as that of the disk 8. If a step motor 10 which moves on the slit 4 and the scanning power supply which varies the strength of the magnetic field of the electromagnet are electrically correlated, the highly accurate implantation which is structurally stable can be performed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10722579A JPS5632722A (en) | 1979-08-24 | 1979-08-24 | Ion implanting apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10722579A JPS5632722A (en) | 1979-08-24 | 1979-08-24 | Ion implanting apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5632722A true JPS5632722A (en) | 1981-04-02 |
Family
ID=14453657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10722579A Pending JPS5632722A (en) | 1979-08-24 | 1979-08-24 | Ion implanting apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5632722A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57130605U (en) * | 1981-02-10 | 1982-08-14 | ||
| JPS61113765A (en) * | 1984-11-09 | 1986-05-31 | Nissin Electric Co Ltd | End station for ion implanting apparatus |
| JPS6396855A (en) * | 1986-10-13 | 1988-04-27 | Hitachi Ltd | Ion implanting device |
-
1979
- 1979-08-24 JP JP10722579A patent/JPS5632722A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57130605U (en) * | 1981-02-10 | 1982-08-14 | ||
| JPS61113765A (en) * | 1984-11-09 | 1986-05-31 | Nissin Electric Co Ltd | End station for ion implanting apparatus |
| JPS6396855A (en) * | 1986-10-13 | 1988-04-27 | Hitachi Ltd | Ion implanting device |
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