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JPS5621320A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5621320A
JPS5621320A JP9641979A JP9641979A JPS5621320A JP S5621320 A JPS5621320 A JP S5621320A JP 9641979 A JP9641979 A JP 9641979A JP 9641979 A JP9641979 A JP 9641979A JP S5621320 A JPS5621320 A JP S5621320A
Authority
JP
Japan
Prior art keywords
electrode
covers
silicon nitride
films
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9641979A
Other languages
Japanese (ja)
Inventor
Hiroo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9641979A priority Critical patent/JPS5621320A/en
Publication of JPS5621320A publication Critical patent/JPS5621320A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To make a fine pattern by a silicon nitride film, which covers an electrode contact window making portion, and to prevent the horizontal extension of a source and a drain regions, by irradiating a laser beam to produce the silicon nitride film. CONSTITUTION:An Si gate electrode 4, a gate insulating film 3, an n<+>-type source region 5 and an n<+>-type drain region 6 are produced on an p-type Si substrate 1. Nitrogen ions are injected. The laser beam is selectively irradiated upon the portion wherein the electrode contact window is to be provided, thereby producing the silicon nitride films 7, 7'. An insulating film 8, which covers the electrode 4, and another insulating film 3', which covers the exposed surface of the substrate 1, are produced by thermal oxidation. The films 7, 7' are removed to manufacture a phosphosilicate glass film 9, a source electrode 10 and a drain electrode 11. Since the films 7, 7' are made by ion injection and laser annealing, the fine pattern can be manufactured and the horizontal extension of the regions 5, 6 is prevented. This results in making the device compact.
JP9641979A 1979-07-28 1979-07-28 Manufacture of semiconductor device Pending JPS5621320A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9641979A JPS5621320A (en) 1979-07-28 1979-07-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9641979A JPS5621320A (en) 1979-07-28 1979-07-28 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5621320A true JPS5621320A (en) 1981-02-27

Family

ID=14164450

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9641979A Pending JPS5621320A (en) 1979-07-28 1979-07-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5621320A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586126A (en) * 1981-07-03 1983-01-13 Fujitsu Ltd Manufacture of semiconductor device
JPS61500687A (en) * 1983-12-10 1986-04-10 バツテレ　デベロプメント　コ−ポレ−シヨン Method for detecting bis-(2-chloroethyl)-sulfide or bis-(2-chloroethyl)-imine
US4897368A (en) * 1987-05-21 1990-01-30 Matsushita Electric Industrial Co., Ltd. Method of fabricating a polycidegate employing nitrogen/oxygen implantation
WO1993000581A1 (en) * 1991-06-26 1993-01-07 United Kingdom Atomic Energy Authority Gas sensor
US6706576B1 (en) * 2002-03-14 2004-03-16 Advanced Micro Devices, Inc. Laser thermal annealing of silicon nitride for increased density and etch selectivity

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5235595A (en) * 1975-09-13 1977-03-18 Matsushita Electric Works Ltd Moving object detection system
JPS5235596A (en) * 1975-09-12 1977-03-18 Hitachi Ltd Burglar watch system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5235596A (en) * 1975-09-12 1977-03-18 Hitachi Ltd Burglar watch system
JPS5235595A (en) * 1975-09-13 1977-03-18 Matsushita Electric Works Ltd Moving object detection system

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586126A (en) * 1981-07-03 1983-01-13 Fujitsu Ltd Manufacture of semiconductor device
JPH0330293B2 (en) * 1981-07-03 1991-04-26
JPS61500687A (en) * 1983-12-10 1986-04-10 バツテレ　デベロプメント　コ−ポレ−シヨン Method for detecting bis-(2-chloroethyl)-sulfide or bis-(2-chloroethyl)-imine
US4897368A (en) * 1987-05-21 1990-01-30 Matsushita Electric Industrial Co., Ltd. Method of fabricating a polycidegate employing nitrogen/oxygen implantation
WO1993000581A1 (en) * 1991-06-26 1993-01-07 United Kingdom Atomic Energy Authority Gas sensor
GB2271643A (en) * 1991-06-26 1994-04-20 Atomic Energy Authority Uk Gas sensor
GB2271643B (en) * 1991-06-26 1994-08-24 Atomic Energy Authority Uk Gas sensor
US6706576B1 (en) * 2002-03-14 2004-03-16 Advanced Micro Devices, Inc. Laser thermal annealing of silicon nitride for increased density and etch selectivity

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