JPS5617061A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5617061A JPS5617061A JP9358679A JP9358679A JPS5617061A JP S5617061 A JPS5617061 A JP S5617061A JP 9358679 A JP9358679 A JP 9358679A JP 9358679 A JP9358679 A JP 9358679A JP S5617061 A JPS5617061 A JP S5617061A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- hole
- coated
- film
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000011248 coating agent Substances 0.000 abstract 3
- 238000000576 coating method Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 230000004888 barrier function Effects 0.000 abstract 2
- 229910001080 W alloy Inorganic materials 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
Classifications
-
- H01L29/417—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To eliminate the reaction of a substrate with an electrode in the semiconductor device by coating an insulating film on the entire surface of a semiconductor substrate, perforating contact hole in a diffused region, and coating an electrode through a barrier layer extended to the edge of the barrier layer or film having smaller hole in the contact hole when coating the electrode thereon. CONSTITUTION:A p-type region is diffused in an n-type Si substrate 1, an insulating film 2 is coated on the entire surface thereof, a contact hole 3 is perforated on a p-type region, and an Au electrode 5' is coated when mounting the electrode thereon as follows: That is, a Ti-W alloy buffer layer 4' having smaller area than the hole 3 is formed on the p-type region exposed on the hole 3, or the hole 3 is buried and is extended from the buffer layer 4' to the edge of the film 2, an Au electrode 5' is coated thereon, and an insulation protective film 7 is coated thereon. In this manner, the reaction of the Au wire the Si is not taken place to eliminate the deterioration of the characteristics of the semiconductor element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9358679A JPS5617061A (en) | 1979-07-20 | 1979-07-20 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9358679A JPS5617061A (en) | 1979-07-20 | 1979-07-20 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5617061A true JPS5617061A (en) | 1981-02-18 |
Family
ID=14086380
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9358679A Pending JPS5617061A (en) | 1979-07-20 | 1979-07-20 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5617061A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63167263A (en) * | 1986-12-27 | 1988-07-11 | Toho Denshi Kk | Sound wave type moisture content sensor |
-
1979
- 1979-07-20 JP JP9358679A patent/JPS5617061A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63167263A (en) * | 1986-12-27 | 1988-07-11 | Toho Denshi Kk | Sound wave type moisture content sensor |
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