JPS561558A - Dynamic memory cell - Google Patents
Dynamic memory cellInfo
- Publication number
- JPS561558A JPS561558A JP7656879A JP7656879A JPS561558A JP S561558 A JPS561558 A JP S561558A JP 7656879 A JP7656879 A JP 7656879A JP 7656879 A JP7656879 A JP 7656879A JP S561558 A JPS561558 A JP S561558A
- Authority
- JP
- Japan
- Prior art keywords
- type
- gate electrode
- layer
- gate
- periphery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Abstract
PURPOSE:To microminiaturize a dynamic RAM while retaining a planar type by providing a drain communicating with a charge storage region under a gate electrode and double diffusing it. CONSTITUTION:An N-type epitaxial layer 32 on a P-type Si substrate 30 is isolated with oxide films 34, channels are cut with P<+>-type layers 36, gate oxide film 40 is irregularly disposed at one side of an active layer limited at the periphery with the oxide films 34, and an opening W is formed at the other side to expose the substrate. A polysilicon gate electrode 38 is formed on the film 40. It is double diffused through the opening W to form a P-type layer 42 and an N<+>-type layer 44, an SiO2 is added to the periphery of the gate electrode 38 to form an aluminum bit wire 48. A word wire is formed as an extension of the gate electrode 38. When the gate G, the source S and the drain D are formed in width to the minimum width F, the plane pattern of this cell has a minimum width of 2F and a minimum length of 2F resulting in an area of 4F<2>. The channel is formed at the portion of the P-type layer 42 confronting the electrode 46 in extremely short length so as to form a microminiature dynamic RAM.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7656879A JPS561558A (en) | 1979-06-18 | 1979-06-18 | Dynamic memory cell |
| US06/159,505 US4455566A (en) | 1979-06-18 | 1980-06-16 | Highly integrated semiconductor memory device |
| DE8080302038T DE3062608D1 (en) | 1979-06-18 | 1980-06-17 | Semiconductor memory device and method of making same |
| EP80302038A EP0021776B1 (en) | 1979-06-18 | 1980-06-17 | Semiconductor memory device and method of making same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7656879A JPS561558A (en) | 1979-06-18 | 1979-06-18 | Dynamic memory cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS561558A true JPS561558A (en) | 1981-01-09 |
| JPS639383B2 JPS639383B2 (en) | 1988-02-29 |
Family
ID=13608828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7656879A Granted JPS561558A (en) | 1979-06-18 | 1979-06-18 | Dynamic memory cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS561558A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57162458A (en) * | 1981-03-31 | 1982-10-06 | Fujitsu Ltd | Semiconductor device |
| JPS59181661A (en) * | 1983-03-31 | 1984-10-16 | Fujitsu Ltd | Semiconductor memory device |
| JPS59212472A (en) * | 1983-05-16 | 1984-12-01 | Sumitomo Chem Co Ltd | 4,5,6,7-tetrahydro-2h-isoindole-1,3-dione derivative, its production and herbicide containing the same as active constituent |
| JPS60161600A (en) * | 1984-02-01 | 1985-08-23 | 株式会社日立製作所 | Dry cleaning device for protective tool, etc. for nuclear power plant |
-
1979
- 1979-06-18 JP JP7656879A patent/JPS561558A/en active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57162458A (en) * | 1981-03-31 | 1982-10-06 | Fujitsu Ltd | Semiconductor device |
| JPH0322063B2 (en) * | 1981-03-31 | 1991-03-26 | Fujitsu Ltd | |
| JPS59181661A (en) * | 1983-03-31 | 1984-10-16 | Fujitsu Ltd | Semiconductor memory device |
| JPS59212472A (en) * | 1983-05-16 | 1984-12-01 | Sumitomo Chem Co Ltd | 4,5,6,7-tetrahydro-2h-isoindole-1,3-dione derivative, its production and herbicide containing the same as active constituent |
| JPH042591B2 (en) * | 1983-05-16 | 1992-01-20 | ||
| JPS60161600A (en) * | 1984-02-01 | 1985-08-23 | 株式会社日立製作所 | Dry cleaning device for protective tool, etc. for nuclear power plant |
| JPH0510640B2 (en) * | 1984-02-01 | 1993-02-10 | Hitachi Ltd |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS639383B2 (en) | 1988-02-29 |
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