JPS56141770A - Driving device of semiconductor element - Google Patents
Driving device of semiconductor elementInfo
- Publication number
- JPS56141770A JPS56141770A JP4122980A JP4122980A JPS56141770A JP S56141770 A JPS56141770 A JP S56141770A JP 4122980 A JP4122980 A JP 4122980A JP 4122980 A JP4122980 A JP 4122980A JP S56141770 A JPS56141770 A JP S56141770A
- Authority
- JP
- Japan
- Prior art keywords
- control signal
- high frequency
- insulating transformer
- transistor
- driving device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
Abstract
PURPOSE:To enable to miniaturize an insulating transformer of the driving device of the semiconductor element and to constitute the insulating transformer by print patterning when a switching element is to be driven by a method wherein a control signal is modulated with a high frequency. CONSTITUTION:A DC power source is fed to the collector of a transistor 71 through the primary winding of the insulating transformer 76. The emitter of the transistor 71 is earthed, the control signal is applied from a control signal generation circuit 9 to the base thereof through a resistor 75, and moreover the base is connected to a high frequency oscillation circuit 8 through a diode 72. When the control signal is applied, the base current of the transistor 71 is modulated by the high frequency oscillation circuit 8 through the diode 72. The insulating transformer 76 is excited by the high frequency, and electric power is transmitted to the secondary side.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4122980A JPS56141770A (en) | 1980-04-01 | 1980-04-01 | Driving device of semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4122980A JPS56141770A (en) | 1980-04-01 | 1980-04-01 | Driving device of semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56141770A true JPS56141770A (en) | 1981-11-05 |
Family
ID=12602572
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4122980A Pending JPS56141770A (en) | 1980-04-01 | 1980-04-01 | Driving device of semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56141770A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009213214A (en) * | 2008-03-03 | 2009-09-17 | Mitsubishi Electric Corp | Power drive power supply |
JP2010284027A (en) * | 2009-06-05 | 2010-12-16 | Mitsubishi Electric Corp | High-frequency ac power supply device |
-
1980
- 1980-04-01 JP JP4122980A patent/JPS56141770A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009213214A (en) * | 2008-03-03 | 2009-09-17 | Mitsubishi Electric Corp | Power drive power supply |
JP2010284027A (en) * | 2009-06-05 | 2010-12-16 | Mitsubishi Electric Corp | High-frequency ac power supply device |
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