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JPS56137673A - Field-effect semiconductor device having open drain output - Google Patents

Field-effect semiconductor device having open drain output

Info

Publication number
JPS56137673A
JPS56137673A JP4019680A JP4019680A JPS56137673A JP S56137673 A JPS56137673 A JP S56137673A JP 4019680 A JP4019680 A JP 4019680A JP 4019680 A JP4019680 A JP 4019680A JP S56137673 A JPS56137673 A JP S56137673A
Authority
JP
Japan
Prior art keywords
drain
diode
gate
source
given
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4019680A
Other languages
Japanese (ja)
Inventor
Tatsuo Mimura
Koichi Onizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP4019680A priority Critical patent/JPS56137673A/en
Publication of JPS56137673A publication Critical patent/JPS56137673A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To protect a gate insulation film by providing a junction diode on a substrate provided with MOSFET, connecting the diode with a source and a drain and thereby preventing a generation of a strong electric field between the gate and the drain. CONSTITUTION:On the N-type substrate 26 are provided a P channel FET 27 comprising the source 23, the drain 24 and a gate electrode 22 and an avalanche diode 28 comprising a P-type anode 29 and an N<+> cathode 30. The cathode 30 of the diode 28 is connected with the source 23 and the connection terminal 31 of the anode 29 with the drain 24, respectively, and an output terminal is provided in a wiring 36 for connecting the drain. In this device, the diode 28 is short-circuited when voltage of V1 or more or of V1-Vs or less is given to the output terminal 32, given that supply voltage given to a terminal 37 is V1 and that the yield voltage of the diode 28 is Vs. Since the occurrence of the high electric field in the region of the drain 24 can be prevented in this way, the breakdown of the gate film 25, as well as the fluctuation of threshold-value voltage owing to injection of charge, can be prevented.
JP4019680A 1980-03-31 1980-03-31 Field-effect semiconductor device having open drain output Pending JPS56137673A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4019680A JPS56137673A (en) 1980-03-31 1980-03-31 Field-effect semiconductor device having open drain output

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4019680A JPS56137673A (en) 1980-03-31 1980-03-31 Field-effect semiconductor device having open drain output

Publications (1)

Publication Number Publication Date
JPS56137673A true JPS56137673A (en) 1981-10-27

Family

ID=12574022

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4019680A Pending JPS56137673A (en) 1980-03-31 1980-03-31 Field-effect semiconductor device having open drain output

Country Status (1)

Country Link
JP (1) JPS56137673A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5276350A (en) * 1991-02-07 1994-01-04 National Semiconductor Corporation Low reverse junction breakdown voltage zener diode for electrostatic discharge protection of integrated circuits

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4713179A (en) * 1971-12-16 1972-07-04
JPS5022879A (en) * 1973-06-28 1975-03-11

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4713179A (en) * 1971-12-16 1972-07-04
JPS5022879A (en) * 1973-06-28 1975-03-11

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5276350A (en) * 1991-02-07 1994-01-04 National Semiconductor Corporation Low reverse junction breakdown voltage zener diode for electrostatic discharge protection of integrated circuits

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