JPS56120128A - Matching mark for electronic beam exposure - Google Patents
Matching mark for electronic beam exposureInfo
- Publication number
- JPS56120128A JPS56120128A JP2483080A JP2483080A JPS56120128A JP S56120128 A JPS56120128 A JP S56120128A JP 2483080 A JP2483080 A JP 2483080A JP 2483080 A JP2483080 A JP 2483080A JP S56120128 A JPS56120128 A JP S56120128A
- Authority
- JP
- Japan
- Prior art keywords
- matching mark
- region
- silicon
- mark
- matching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/5442—Marks applied to semiconductor devices or parts comprising non digital, non alphanumeric information, e.g. symbols
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To make high-precision matching of a mark by forming a region where an electronic beam matching mark is formed surrounded by a silicon removed part in such manner that a region for forming a device body is formed may be isolated with regard to an automatic matching mark when a semiconductor device is directly exposed by means of an electronic beam. CONSTITUTION:The point is such that a region where a matching mark for exposure with an electronic beam, is formed surrounded by a silicon removed part in such manner that said region may be isolated from a region where a device body is formed. For instance, a cavity formed on the surface of silicon itself is an isolation region for forming a matching mark and a silicon protrusion formed independently in said isolation region in an islandlike pattern, is a matching mark. In this case, a protruded matching mark 502 is formed like an island in a silicon cavity 502. The step of silicon is preferably equivalent to, for instance, 0.5-5mum. The distance l from the matching mark to a surrounding wall drawing the isolation region shall be free from any influence of the wall when the matching mark is scanned.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2483080A JPS56120128A (en) | 1980-02-28 | 1980-02-28 | Matching mark for electronic beam exposure |
US06/237,049 US4356223A (en) | 1980-02-28 | 1981-02-23 | Semiconductor device having a registration mark for use in an exposure technique for micro-fine working |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2483080A JPS56120128A (en) | 1980-02-28 | 1980-02-28 | Matching mark for electronic beam exposure |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56120128A true JPS56120128A (en) | 1981-09-21 |
Family
ID=12149104
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2483080A Pending JPS56120128A (en) | 1980-02-28 | 1980-02-28 | Matching mark for electronic beam exposure |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56120128A (en) |
-
1980
- 1980-02-28 JP JP2483080A patent/JPS56120128A/en active Pending
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