JPS56115565A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56115565A JPS56115565A JP1939180A JP1939180A JPS56115565A JP S56115565 A JPS56115565 A JP S56115565A JP 1939180 A JP1939180 A JP 1939180A JP 1939180 A JP1939180 A JP 1939180A JP S56115565 A JPS56115565 A JP S56115565A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- base
- forming
- base layer
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
- H01L29/1008—Base region of bipolar transistors of lateral transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To form a base having narrow width in the horizontal transistor by forming a base layer in contact with a buried diffused layer having low specific resistance to reduce the external base resistance and forming a base layer and an emitter layer through the same forming window. CONSTITUTION:A base layer 15 reaching a P<+> type buried diffused layer 13 at the bottom is formed in contact with a field SiO2 film 12 at the three sides at a collector layer 14 insulated from the substrate via a P<+> type buried diffused layer (external base layer) 13 formed to make contact with the bottom of the film 12 in the substrate 11. An emitter layer 18 self-aligned with the base layer 15 via the SiO2 film 17 on the field film 12 and the collector layer 14 used as a mask when forming the base layer 15 in the region in the vicinity of the layer 14 of the layer 15 is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1939180A JPS56115565A (en) | 1980-02-19 | 1980-02-19 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1939180A JPS56115565A (en) | 1980-02-19 | 1980-02-19 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56115565A true JPS56115565A (en) | 1981-09-10 |
Family
ID=11997978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1939180A Pending JPS56115565A (en) | 1980-02-19 | 1980-02-19 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56115565A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59104166A (en) * | 1982-11-22 | 1984-06-15 | フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン | Control of injecting substrate in lateral bipolar transistor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5017584A (en) * | 1973-05-07 | 1975-02-24 |
-
1980
- 1980-02-19 JP JP1939180A patent/JPS56115565A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5017584A (en) * | 1973-05-07 | 1975-02-24 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59104166A (en) * | 1982-11-22 | 1984-06-15 | フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン | Control of injecting substrate in lateral bipolar transistor |
| JPH0362015B2 (en) * | 1982-11-22 | 1991-09-24 | Fueachairudo Kamera Endo Insutsurumento Corp |
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