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JPS5597467A - Ion plating equipment - Google Patents

Ion plating equipment

Info

Publication number
JPS5597467A
JPS5597467A JP339179A JP339179A JPS5597467A JP S5597467 A JPS5597467 A JP S5597467A JP 339179 A JP339179 A JP 339179A JP 339179 A JP339179 A JP 339179A JP S5597467 A JPS5597467 A JP S5597467A
Authority
JP
Japan
Prior art keywords
ion plating
evaporating material
evaporating
control
vacuum chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP339179A
Other languages
Japanese (ja)
Inventor
Katsumi Aota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Watch Co Ltd
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Watch Co Ltd filed Critical Citizen Watch Co Ltd
Priority to JP339179A priority Critical patent/JPS5597467A/en
Publication of JPS5597467A publication Critical patent/JPS5597467A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To operate ion plating with uniform film characteristic using stabilized plasma by high degree control of operating conditions such as evaporating material, atmospheric gas composition, and chemical state in the vacuum chamber of an ion plating unit. CONSTITUTION:In the vacuum chamber 1, cathode 3 for holding substrate 2 to be treated, auxiliary filaments 3a, 3b, and anode evaporating source 4 containing evaporating material 8 are placed. The pressure in the chamber 1 is adjusted to a value suited to ion plating by adjusting the automatic gas supplier 9 and the exhaustion outlet 6. The evaporating material 8 melts and evaporates, and mass numbers characteristic to each component and atmosphere gas are detected by the mass spectrograph 13. This allows the detector 12b to detect quantitatively composition, physical and chemical states of each components in plasma. The signal from the detecter 12b is compared with that of control circuit 12d, and control signals 14a- 14c are sent so that the automatic gas supplier 9, the evaporating material control power supply 15, and the ionization power supplies 7a, 7b are automatically controlled to proper ion plating condition.
JP339179A 1979-01-18 1979-01-18 Ion plating equipment Pending JPS5597467A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP339179A JPS5597467A (en) 1979-01-18 1979-01-18 Ion plating equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP339179A JPS5597467A (en) 1979-01-18 1979-01-18 Ion plating equipment

Publications (1)

Publication Number Publication Date
JPS5597467A true JPS5597467A (en) 1980-07-24

Family

ID=11556056

Family Applications (1)

Application Number Title Priority Date Filing Date
JP339179A Pending JPS5597467A (en) 1979-01-18 1979-01-18 Ion plating equipment

Country Status (1)

Country Link
JP (1) JPS5597467A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS596376A (en) * 1982-06-30 1984-01-13 Anelva Corp Sputtering apparatus
JPS5989768A (en) * 1982-11-12 1984-05-24 Fujitsu Ltd Formation of thin film
WO1997030186A1 (en) * 1996-02-14 1997-08-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method and device for control of plasma enhanced vacuum coating processes
JP2015522208A (en) * 2012-07-13 2015-08-03 ユーエイビー・ノヴァ・ファブリカＵａｂ Ｎｏｖａ Ｆａｂｒｉｃａ Assembly for use in vacuum processing methods

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA954068A (en) * 1972-03-27 1974-09-03 William D. Westwood Method and apparatus for controlling the electrical properties of sputtered films
JPS53113281A (en) * 1977-03-16 1978-10-03 Hitachi Ltd Surface treatment apparatus
JPS54153791A (en) * 1978-05-24 1979-12-04 Gould Inc Method and apparatus for watching and controlling sputtering adhesion

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA954068A (en) * 1972-03-27 1974-09-03 William D. Westwood Method and apparatus for controlling the electrical properties of sputtered films
JPS53113281A (en) * 1977-03-16 1978-10-03 Hitachi Ltd Surface treatment apparatus
JPS54153791A (en) * 1978-05-24 1979-12-04 Gould Inc Method and apparatus for watching and controlling sputtering adhesion

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS596376A (en) * 1982-06-30 1984-01-13 Anelva Corp Sputtering apparatus
JPS5989768A (en) * 1982-11-12 1984-05-24 Fujitsu Ltd Formation of thin film
JPS6321749B2 (en) * 1982-11-12 1988-05-09 Fujitsu Ltd
WO1997030186A1 (en) * 1996-02-14 1997-08-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method and device for control of plasma enhanced vacuum coating processes
JP2015522208A (en) * 2012-07-13 2015-08-03 ユーエイビー・ノヴァ・ファブリカＵａｂ Ｎｏｖａ Ｆａｂｒｉｃａ Assembly for use in vacuum processing methods

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