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JPS5586161A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5586161A
JPS5586161A JP16162978A JP16162978A JPS5586161A JP S5586161 A JPS5586161 A JP S5586161A JP 16162978 A JP16162978 A JP 16162978A JP 16162978 A JP16162978 A JP 16162978A JP S5586161 A JPS5586161 A JP S5586161A
Authority
JP
Japan
Prior art keywords
type
region
layer
substrate
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16162978A
Other languages
Japanese (ja)
Inventor
Takehide Shirato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16162978A priority Critical patent/JPS5586161A/en
Publication of JPS5586161A publication Critical patent/JPS5586161A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To eliminate effects from other parts and reduce parasitic capacity by using as diffusion region forming mask a photoresist film first and a metal film next when enhancement type and depletion type elements are provided in the same semiconductor substrate.
CONSTITUTION: Three thick field oxide films 2 are formed on the surface of p-type Si substrate 1, and thin gate oxide film 4 is coated on the exposed parts between these on substrate 1. Next, resist film 7 having an opening to enhancement type (E-type) element forming region 31 is provided only on the depletion type (D-type) element forming region, and by injecting ions in substrate 1 in region 31 by using this as mask, p-type region 5 is formed. Subsequently, the entire surface is covered with Al layer 8, and film 7, together with layer 8 lying on this, is removed; and only layer 8 lying on region 31 is retained, and by injecting ions in D-type element forming region 32 by using this as mask, n-type region 6 is formed. Next, layer 8, which has become unneeded, is removed, and E-type and D-type elements are provided in the respective regions.
COPYRIGHT: (C)1980,JPO&Japio
JP16162978A 1978-12-23 1978-12-23 Manufacture of semiconductor device Pending JPS5586161A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16162978A JPS5586161A (en) 1978-12-23 1978-12-23 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16162978A JPS5586161A (en) 1978-12-23 1978-12-23 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5586161A true JPS5586161A (en) 1980-06-28

Family

ID=15738810

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16162978A Pending JPS5586161A (en) 1978-12-23 1978-12-23 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5586161A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007158105A (en) * 2005-12-06 2007-06-21 Matsushita Electric Ind Co Ltd Integrated circuit and manufacturing method therefor
US8800962B2 (en) 2008-01-28 2014-08-12 Kohler Co. Valve assembly having improved connections

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007158105A (en) * 2005-12-06 2007-06-21 Matsushita Electric Ind Co Ltd Integrated circuit and manufacturing method therefor
US8800962B2 (en) 2008-01-28 2014-08-12 Kohler Co. Valve assembly having improved connections
US9086155B2 (en) 2008-01-28 2015-07-21 Kohler Co. Valve assembly having improved rotational feel
US9476508B2 (en) 2008-01-28 2016-10-25 Kohler Co. Valve assembly having improved rotational feel
US9915367B2 (en) 2008-01-28 2018-03-13 Kohler Co. Valve assembly having improved rotational feel

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