[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JPS5583380A - Infrared-ray detecting cid - Google Patents

Infrared-ray detecting cid

Info

Publication number
JPS5583380A
JPS5583380A JP15880878A JP15880878A JPS5583380A JP S5583380 A JPS5583380 A JP S5583380A JP 15880878 A JP15880878 A JP 15880878A JP 15880878 A JP15880878 A JP 15880878A JP S5583380 A JPS5583380 A JP S5583380A
Authority
JP
Japan
Prior art keywords
vapor
layer
deposited
well
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15880878A
Other languages
Japanese (ja)
Inventor
Hiroshi Takigawa
Shoji Doi
Soichi Imai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15880878A priority Critical patent/JPS5583380A/en
Publication of JPS5583380A publication Critical patent/JPS5583380A/en
Pending legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE: To obtain high reliability at low cost by realizing high-density cells, by forming a PN-junction by providing a high-density diffusion layer on the reverse surface of an infrared-ray charge-injection cell.
CONSTITUTION: From the surface of n-type MCT substrate 11, acceptor impurities are diffused to form diffusion layer 12 and on one side of the diffusion surface, a gold vapor-deposition surface is formed as earth electrode 16. The other surface of the semiconductor substrate is made into a thin layer and 1st insulating layer 13 of zinc sulfide is vapor-deposited and a 1st layer of metal as a X bus and gate electrode 2 are also vapor-deposited; and a 2nd insulating layer 13' for interbus insulation is vapor-deposited and on it, a 2nd layer of metal as a Y bus is vapor-deposited as well. As a result, an acceleration electric field in a bulk direction of positive holes resides since the MCT substrate is made into the p-type through high-density impurity diffusion from the reverse surface of potential well 3 to substrate 11. As a result, carriers are pulled in the bulk direction and diffused in an adjacent well direction without moving into the well, so that cross talk will never occur at all.
COPYRIGHT: (C)1980,JPO&Japio
JP15880878A 1978-12-20 1978-12-20 Infrared-ray detecting cid Pending JPS5583380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15880878A JPS5583380A (en) 1978-12-20 1978-12-20 Infrared-ray detecting cid

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15880878A JPS5583380A (en) 1978-12-20 1978-12-20 Infrared-ray detecting cid

Publications (1)

Publication Number Publication Date
JPS5583380A true JPS5583380A (en) 1980-06-23

Family

ID=15679802

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15880878A Pending JPS5583380A (en) 1978-12-20 1978-12-20 Infrared-ray detecting cid

Country Status (1)

Country Link
JP (1) JPS5583380A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61281683A (en) * 1985-03-15 1986-12-12 Fuji Photo Film Co Ltd Image detecting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61281683A (en) * 1985-03-15 1986-12-12 Fuji Photo Film Co Ltd Image detecting device

Similar Documents

Publication Publication Date Title
JPS6453468A (en) Solar battery
GB1206034A (en) Integrated solar cell array
AU1358795A (en) Method for manufacture of a solar cell and solar cell
GB1501018A (en) Television cameras
JPS567463A (en) Semiconductor device and its manufacture
US4743955A (en) Photoelectric converting device
JPS5583380A (en) Infrared-ray detecting cid
JPS5522879A (en) Insulation gate type field effect semiconductor device
JPS5670675A (en) Manufacture of photoelectric converter
JPS54156490A (en) Forming method of current path in semiconductor
JPS54122983A (en) Semiconductor integrated circuit
US4017884A (en) Magnetic field sensitive diode and method of making same
JPS5718367A (en) Floating gate semiconductor memory
JPS57103350A (en) Manufacture of semiconductor memory
JPS5522885A (en) Insulation gate type field effect semiconductor device
GB1483647A (en) Charge transfer device
JPS6490575A (en) Formation of contact of superconductor and semiconductor
JPS55157240A (en) Semiconductor device
JPS57102070A (en) Semiconductor device
JPS56101779A (en) Schottky barrier diode
JPS5723221A (en) Manufacture of semiconductor device
JPS57128959A (en) Solid state image pickup element
JPS641284A (en) Zener diode
JPS5513981A (en) Semiconductor device
JPS57181276A (en) Solid-state image pickup device