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JPS5529108A - Semiconductor resistance element - Google Patents

Semiconductor resistance element

Info

Publication number
JPS5529108A
JPS5529108A JP10178078A JP10178078A JPS5529108A JP S5529108 A JPS5529108 A JP S5529108A JP 10178078 A JP10178078 A JP 10178078A JP 10178078 A JP10178078 A JP 10178078A JP S5529108 A JPS5529108 A JP S5529108A
Authority
JP
Japan
Prior art keywords
type
layer
resistance
poly
construction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10178078A
Other languages
Japanese (ja)
Inventor
Tatsu Ito
Hisao Katsuto
Kosuke Okuyama
Kazuo Yudasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10178078A priority Critical patent/JPS5529108A/en
Publication of JPS5529108A publication Critical patent/JPS5529108A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To control resistivity by adding p-type impurities to an n-type polycrystal or amorphous resistance layer built up on the insulating layer of a substrate. CONSTITUTION:If an n-type poly Si resistance layer on an insulating film 2 is built up, and if an n<+> layer for the portion operating as an electrode is prepared, the element changes the value of resistance easily with heat treatment and hydrogen treatment at relatively low temperatures. Therefore, a poly Si resistance portion 5 is now transformed into a p-type layer with the density of approximately 10<13>- 5X10<14>cm<-2> by injecting B ions so as to make it into a n<+>-p-n<+> construction. Although this construction is inferior to n<+>-n-n<+> construction in view of the linearity of voltage-current characteristics, it can prevent the surface of poly Si from changing into n-type which is the cause of characteristic alteration, and the greater the amount of B addition, the more it is stabilized. Furthermore, the addition of P may be considered, but it is rather difficult to make the element smaller in the case of P, therefore the use of B or Sb can reduce the characteristic changes of MOS high resistance elements.
JP10178078A 1978-08-23 1978-08-23 Semiconductor resistance element Pending JPS5529108A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10178078A JPS5529108A (en) 1978-08-23 1978-08-23 Semiconductor resistance element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10178078A JPS5529108A (en) 1978-08-23 1978-08-23 Semiconductor resistance element

Publications (1)

Publication Number Publication Date
JPS5529108A true JPS5529108A (en) 1980-03-01

Family

ID=14309698

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10178078A Pending JPS5529108A (en) 1978-08-23 1978-08-23 Semiconductor resistance element

Country Status (1)

Country Link
JP (1) JPS5529108A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5871648A (en) * 1981-10-23 1983-04-28 Nec Corp Semiconductor device
US4514646A (en) * 1980-08-20 1985-04-30 Hitachi, Ltd. Semiconductor integrated circuit device including a protective resistor arrangement for output transistors
US4604641A (en) * 1981-11-30 1986-08-05 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same
JPS63158852A (en) * 1986-12-22 1988-07-01 Mitsubishi Electric Corp Semiconductor device
JPS63174369A (en) * 1987-01-14 1988-07-18 Mitsubishi Electric Corp Semiconductor device
US5670820A (en) * 1987-05-01 1997-09-23 Inmos Limited Semiconductor element incorporating a resistive device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5449082A (en) * 1977-09-26 1979-04-18 Mitsubishi Electric Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5449082A (en) * 1977-09-26 1979-04-18 Mitsubishi Electric Corp Semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514646A (en) * 1980-08-20 1985-04-30 Hitachi, Ltd. Semiconductor integrated circuit device including a protective resistor arrangement for output transistors
JPS5871648A (en) * 1981-10-23 1983-04-28 Nec Corp Semiconductor device
JPH0131704B2 (en) * 1981-10-23 1989-06-27 Nippon Electric Co
US4604641A (en) * 1981-11-30 1986-08-05 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same
JPS63158852A (en) * 1986-12-22 1988-07-01 Mitsubishi Electric Corp Semiconductor device
JPS63174369A (en) * 1987-01-14 1988-07-18 Mitsubishi Electric Corp Semiconductor device
US5670820A (en) * 1987-05-01 1997-09-23 Inmos Limited Semiconductor element incorporating a resistive device

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