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JPS5519816A - Semiconductor light-receiving element - Google Patents

Semiconductor light-receiving element

Info

Publication number
JPS5519816A
JPS5519816A JP9158778A JP9158778A JPS5519816A JP S5519816 A JPS5519816 A JP S5519816A JP 9158778 A JP9158778 A JP 9158778A JP 9158778 A JP9158778 A JP 9158778A JP S5519816 A JPS5519816 A JP S5519816A
Authority
JP
Japan
Prior art keywords
δwg
light
resistance layer
resistance
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9158778A
Other languages
Japanese (ja)
Inventor
Nobuhiko Susa
Yoshiharu Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP9158778A priority Critical patent/JPS5519816A/en
Publication of JPS5519816A publication Critical patent/JPS5519816A/en
Pending legal-status Critical Current

Links

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To minimize noise by using a material with a relatively small prohibition band width ΔWg at high resistance in contact with a shot key electrode, using a material with a large ΔWg at low resistance in contact with an ohmic electrode and radiating light from the side of large ΔWg.
CONSTITUTION: A high-resistance layer 9 with relatively small ΔWg, such as, InxGa1-xAs, etc., is provided with a shot key electrode 3, and a low-resistance layer 10 with relatively large ΔWg, such as GaAs, etc., is provided with an ohmic electrode 7 and a light-radiating window 11. A reflection-preventing film 4 and a guard ring 6 are also provided. By employing n-type for semiconductor layers 9 and 10, an ionization rate of a positive hole is assumed to be larger than that of an electron. If a light-radiating energy of ΔWg9<hν<Wg11 is chosen, a light radiated in the direction of an arrow 8 is made to penetrate through the low-resistance layer 10 and absorbed only by the high-resistance layer 9, and when this element is used as an APD, since an electron does not move due to a barrier qϕB of the shot key joining section and only the positive hole is poured from the layer 9 into a high electric field region of the joining section, noise is lowered.
COPYRIGHT: (C)1980,JPO&Japio
JP9158778A 1978-07-28 1978-07-28 Semiconductor light-receiving element Pending JPS5519816A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9158778A JPS5519816A (en) 1978-07-28 1978-07-28 Semiconductor light-receiving element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9158778A JPS5519816A (en) 1978-07-28 1978-07-28 Semiconductor light-receiving element

Publications (1)

Publication Number Publication Date
JPS5519816A true JPS5519816A (en) 1980-02-12

Family

ID=14030674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9158778A Pending JPS5519816A (en) 1978-07-28 1978-07-28 Semiconductor light-receiving element

Country Status (1)

Country Link
JP (1) JPS5519816A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013510428A (en) * 2009-11-05 2013-03-21 ザ・ボーイング・カンパニー Plastic optical fiber network detector

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4053918A (en) * 1974-08-05 1977-10-11 Nasa High voltage, high current Schottky barrier solar cell

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4053918A (en) * 1974-08-05 1977-10-11 Nasa High voltage, high current Schottky barrier solar cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013510428A (en) * 2009-11-05 2013-03-21 ザ・ボーイング・カンパニー Plastic optical fiber network detector

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