JPS55160462A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS55160462A JPS55160462A JP6787779A JP6787779A JPS55160462A JP S55160462 A JPS55160462 A JP S55160462A JP 6787779 A JP6787779 A JP 6787779A JP 6787779 A JP6787779 A JP 6787779A JP S55160462 A JPS55160462 A JP S55160462A
- Authority
- JP
- Japan
- Prior art keywords
- diode
- gates
- gate
- semiconductor device
- mos transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 230000002411 adverse Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To highly integrate the semiconductor device without adversely effecting the characteristics of the device by commonly connecting gates through zener diodes formed at the connecting portions of the respective gates of a C-MOS transistor. CONSTITUTION:There is connected between the P<+> type polycrystalline Si gate 7a of a P channel MOS transistor TrQP and the N<+> type polycrystalline Si gate 7b of an N channel MOSTrQn through a zener diode ZD. That is, the connecting portions of the gates 7a, 7b are confronted to form a P<+>N<+> junction zener diode ZD, and both gates are connected through the diode ZD. In this manner, the voltage drop at the diode ZD becomes approx. 0.2V, and since this diode has a property for flowing a current also in reverse direction, it can perform substantially equal function to the connection by metal layer. The wire is also preserved in increase of the steps by employing the polycrystalline Si layer forming the gate of the TrQn so as to improve the integrating degree of the semiconductor device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6787779A JPS55160462A (en) | 1979-05-31 | 1979-05-31 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6787779A JPS55160462A (en) | 1979-05-31 | 1979-05-31 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55160462A true JPS55160462A (en) | 1980-12-13 |
JPS628949B2 JPS628949B2 (en) | 1987-02-25 |
Family
ID=13357571
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6787779A Granted JPS55160462A (en) | 1979-05-31 | 1979-05-31 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55160462A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS582068A (en) * | 1981-06-26 | 1983-01-07 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPS5957469A (en) * | 1982-09-28 | 1984-04-03 | Fujitsu Ltd | Semiconductor device |
JPS6276665A (en) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | Complementary semiconductor device |
JPS6381984A (en) * | 1986-09-26 | 1988-04-12 | Nippon Denso Co Ltd | Polycrystal semiconductor diode |
JP2017191926A (en) * | 2016-04-13 | 2017-10-19 | イーメモリー テクノロジー インコーポレイテッド | Semiconductor apparatus with fake functionality |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0369463A (en) * | 1989-08-03 | 1991-03-25 | Kichinosuke Nagashio | Cap for liquid container |
-
1979
- 1979-05-31 JP JP6787779A patent/JPS55160462A/en active Granted
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS582068A (en) * | 1981-06-26 | 1983-01-07 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPS5957469A (en) * | 1982-09-28 | 1984-04-03 | Fujitsu Ltd | Semiconductor device |
JPS6276665A (en) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | Complementary semiconductor device |
JPH0322708B2 (en) * | 1985-09-30 | 1991-03-27 | Tokyo Shibaura Electric Co | |
JPS6381984A (en) * | 1986-09-26 | 1988-04-12 | Nippon Denso Co Ltd | Polycrystal semiconductor diode |
JP2017191926A (en) * | 2016-04-13 | 2017-10-19 | イーメモリー テクノロジー インコーポレイテッド | Semiconductor apparatus with fake functionality |
US10090260B2 (en) | 2016-04-13 | 2018-10-02 | Ememory Technology Inc. | Semiconductor apparatus with fake functionality |
Also Published As
Publication number | Publication date |
---|---|
JPS628949B2 (en) | 1987-02-25 |
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