JPS55153194A - Integrated semiconductor memory unit - Google Patents
Integrated semiconductor memory unitInfo
- Publication number
- JPS55153194A JPS55153194A JP6199479A JP6199479A JPS55153194A JP S55153194 A JPS55153194 A JP S55153194A JP 6199479 A JP6199479 A JP 6199479A JP 6199479 A JP6199479 A JP 6199479A JP S55153194 A JPS55153194 A JP S55153194A
- Authority
- JP
- Japan
- Prior art keywords
- refreshing
- storage capacitor
- clock
- level
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
Abstract
PURPOSE:To provide dynamic MOSRAM with a sufficient automatic refreshing function by composing a memory cell of two transistors and one storage capacitor. CONSTITUTION:Memory cell 1 consists of transistor TR controlling input-output operation for memory information, TR controlling the refreshing of memory information and storage capacitor. When activated clock 10 is high in level, refresh word line RW, for example, is selected and held at a high level to read charge accumulated in the storage capacitor to refresh bit line RB1, and refresh bit line RB2, on the other hand, is held at an intermediate potential between two high and low levels by dummy cell 4. Then, activating refreshing sense amplifier 3 amplifies the potential difference between bit lines RB1 and RB2 and refreshed memory information is rewritten in cell 1. When clock 10 is low in level, refreshing operation comes into effect by a clock generated by low-frequency clock generating circuit 12.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6199479A JPS55153194A (en) | 1979-05-18 | 1979-05-18 | Integrated semiconductor memory unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6199479A JPS55153194A (en) | 1979-05-18 | 1979-05-18 | Integrated semiconductor memory unit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55153194A true JPS55153194A (en) | 1980-11-28 |
Family
ID=13187256
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6199479A Pending JPS55153194A (en) | 1979-05-18 | 1979-05-18 | Integrated semiconductor memory unit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55153194A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63275096A (en) * | 1987-05-06 | 1988-11-11 | Mitsubishi Electric Corp | Semiconductor storage device |
| US6377499B1 (en) | 2000-09-18 | 2002-04-23 | Mitsubishi Denki Kabushiki Kaisha | Refresh-free semiconductor memory device |
| US6388934B1 (en) | 2000-10-04 | 2002-05-14 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device operating at high speed with low current consumption |
| EP1258888A2 (en) * | 2001-05-14 | 2002-11-20 | Infineon Technologies AG | Multi-port memory cell with refresh port |
| US6862205B2 (en) | 2002-03-06 | 2005-03-01 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory device |
-
1979
- 1979-05-18 JP JP6199479A patent/JPS55153194A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63275096A (en) * | 1987-05-06 | 1988-11-11 | Mitsubishi Electric Corp | Semiconductor storage device |
| US6377499B1 (en) | 2000-09-18 | 2002-04-23 | Mitsubishi Denki Kabushiki Kaisha | Refresh-free semiconductor memory device |
| US6388934B1 (en) | 2000-10-04 | 2002-05-14 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device operating at high speed with low current consumption |
| EP1258888A2 (en) * | 2001-05-14 | 2002-11-20 | Infineon Technologies AG | Multi-port memory cell with refresh port |
| US6862205B2 (en) | 2002-03-06 | 2005-03-01 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory device |
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