JPS55158650A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To form an opening, whose edge portion is gentle, to an insulating layer by a method wherein a mask layer projecting in the lateral direction is mounted at the desired location on a semiconductor substrate or a conductor layer, the whole surface is coated with the insulating layer while rotating the substrate, and the mask layer is removed. CONSTITUTION:An insulating film 2 is coated on a semiconductor substrate 1, electrode wiring 3 with a fixed pattern is mounted onto the film, the whole surface is covered with an insulating film 22, and an opening for connection is disposed being positioned on the wiring 3. These operations are as follows. That is, a positive type photoresist film 21, whose dimensions are smaller than the wiring 3, is formed on the wiring 3, solubility on the surface is previously lowered by dropping chlorbenzene on the surface, the film 21 is exposed and developed, and the upper ends of the film 21 are projected in the lateral direction. The whole surface is coated with the insulating film 22 while rotating the substrate 1, the film 21 is removed with the film 22 coated on the film 21, and the film 22 with a gentle edge portion is left on the fringe of the wiring 3. Thus, a connecting wire is not broken even when the connecting wire is mounted to the wiring 3 in a shape that is extended on the film 22.