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JPS55111191A - Method of manufacturing semiconductor laser device - Google Patents

Method of manufacturing semiconductor laser device

Info

Publication number
JPS55111191A
JPS55111191A JP1931279A JP1931279A JPS55111191A JP S55111191 A JPS55111191 A JP S55111191A JP 1931279 A JP1931279 A JP 1931279A JP 1931279 A JP1931279 A JP 1931279A JP S55111191 A JPS55111191 A JP S55111191A
Authority
JP
Japan
Prior art keywords
type
layer
film
semiconductor laser
photoetched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1931279A
Other languages
Japanese (ja)
Inventor
Yukio Kurata
Morichika Yano
Saburo Yamamoto
Kaneki Matsui
Toshiro Hayakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP1931279A priority Critical patent/JPS55111191A/en
Publication of JPS55111191A publication Critical patent/JPS55111191A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To attain an electrical current constriction effect and cause stable single basic transverse mode oscillation with a small spot.
CONSTITUTION: An n-type Alx2Ga1-x2As layer 2, a p-type Alx3Ga1-x3As layer 3, a p-type Alx6Ga1-x6As layer 6 and a p-type GaAs layer 7 are sequentially epitaxially grown on an n-type GaAs substrate 1. After a film 10 of Al2O3, SiO2, Si3N4 or the like is deposited, the film is photoetched at a desired stripe width. The photoetched film is used as a mask to selectively etch the layers 7, 6 to provide a striped laminated assembly. An n-type Alx4Ga1-x4As layer 4 and a p- or n-type GaAs layer 5 are then epitaxially grown. The film 10 is removed. Zinc is diffused into the gaAs layers 5, 7 within a small width. Electrodes 8, 9 are provided. The assembly is divided into semiconductor laser units.
COPYRIGHT: (C)1980,JPO&Japio
JP1931279A 1979-02-20 1979-02-20 Method of manufacturing semiconductor laser device Pending JPS55111191A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1931279A JPS55111191A (en) 1979-02-20 1979-02-20 Method of manufacturing semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1931279A JPS55111191A (en) 1979-02-20 1979-02-20 Method of manufacturing semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS55111191A true JPS55111191A (en) 1980-08-27

Family

ID=11995889

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1931279A Pending JPS55111191A (en) 1979-02-20 1979-02-20 Method of manufacturing semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS55111191A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0209387A2 (en) * 1985-07-18 1987-01-21 Sharp Kabushiki Kaisha Semiconductor laser device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0209387A2 (en) * 1985-07-18 1987-01-21 Sharp Kabushiki Kaisha Semiconductor laser device
US4899349A (en) * 1985-07-18 1990-02-06 Sharp Kabushiki Kaisha Semiconductor laser device

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