JPS5482983A - Manufacture of insulating gate type field effect transistor - Google Patents
Manufacture of insulating gate type field effect transistorInfo
- Publication number
- JPS5482983A JPS5482983A JP15086077A JP15086077A JPS5482983A JP S5482983 A JPS5482983 A JP S5482983A JP 15086077 A JP15086077 A JP 15086077A JP 15086077 A JP15086077 A JP 15086077A JP S5482983 A JPS5482983 A JP S5482983A
- Authority
- JP
- Japan
- Prior art keywords
- film
- source
- coated
- substrate
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To obtain the IGFET in a simple way and with reduction of the number of the photomechanical processes by coating preliminarily the uni-conducting metal on the surface of the reverse conducting layer. The uni-conducting metal is used as the diffusion impurity source when forming the source and drain regions and then used as the electrodes for these regions after formation of the regions.
CONSTITUTION: The gate insulating film, thick SiO2 film 3 and thick poly-crystal Si film 4 containing the impurity are coated on N-type Si substrate 1 with window 5 and 6 drilled. Then Al films 7a∼7b which are thinner than film 3 are coated on substrate 1, and at the same time Al film 7c is coated on remaining film 4. A heat treatment is given in the inactive gas, and P-type source region 8 and P-type drain region 9 are formed within substrate 1 using film 7a and 7b as the impurity sources. At the same time, remaining film 7a and 7b are used as source electrode 70a and drain electrode 70b respectively. Film 7c on film 4 is used as gate electrode 70c. In such way, the production time can be reduced with a simple way of producing.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15086077A JPS5482983A (en) | 1977-12-14 | 1977-12-14 | Manufacture of insulating gate type field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15086077A JPS5482983A (en) | 1977-12-14 | 1977-12-14 | Manufacture of insulating gate type field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5482983A true JPS5482983A (en) | 1979-07-02 |
Family
ID=15505951
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15086077A Pending JPS5482983A (en) | 1977-12-14 | 1977-12-14 | Manufacture of insulating gate type field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5482983A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58127378A (en) * | 1982-01-23 | 1983-07-29 | Canon Inc | Manufacture of semiconductor device |
JPS603158A (en) * | 1983-06-06 | 1985-01-09 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Method of forming field effect transistor |
-
1977
- 1977-12-14 JP JP15086077A patent/JPS5482983A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58127378A (en) * | 1982-01-23 | 1983-07-29 | Canon Inc | Manufacture of semiconductor device |
JPH055172B2 (en) * | 1982-01-23 | 1993-01-21 | Canon Kk | |
JPS603158A (en) * | 1983-06-06 | 1985-01-09 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Method of forming field effect transistor |
JPH0523056B2 (en) * | 1983-06-06 | 1993-03-31 | Intaanashonaru Bijinesu Mashiinzu Corp |
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