JPS5444477A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS5444477A JPS5444477A JP11070377A JP11070377A JPS5444477A JP S5444477 A JPS5444477 A JP S5444477A JP 11070377 A JP11070377 A JP 11070377A JP 11070377 A JP11070377 A JP 11070377A JP S5444477 A JPS5444477 A JP S5444477A
- Authority
- JP
- Japan
- Prior art keywords
- film
- etching
- polycrystal
- fine pattern
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To form fine pattern simply and with excellent control-ability without photo etching method.
CONSTITUTION: The step 22 consisting of the upper surface 25, side surface 26 and bottom surface 27 is formed on the surface of the semiconductor substrate 21 with ion etching, and the side surface 26 is made vertical. When the CVD oxide film 23 and polycrystal Si film 24 are sequetially deposited, the film thickness is made thicker by the step's share near the step side surface 26. Succeedingly, when the etching gas is incident vertically, since gas amount is less, reaching the side surface 26', then the etching speed is slow, and when the film 24 on the upper side 25 and the bottom side 27 is etched for removal, the polycrystal Si film 24' having the same height L as the step and the same thickness W as the film 24 is remained on the side surface 26. Thus, fine pattern is formed with good controlability independing of photo etching.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11070377A JPS5444477A (en) | 1977-09-14 | 1977-09-14 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11070377A JPS5444477A (en) | 1977-09-14 | 1977-09-14 | Manufacture for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5444477A true JPS5444477A (en) | 1979-04-07 |
| JPS6143847B2 JPS6143847B2 (en) | 1986-09-30 |
Family
ID=14542306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11070377A Granted JPS5444477A (en) | 1977-09-14 | 1977-09-14 | Manufacture for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5444477A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5563844A (en) * | 1978-11-03 | 1980-05-14 | Ibm | Method of forming insulator between conductive layers |
| JPS57112028A (en) * | 1980-12-29 | 1982-07-12 | Fujitsu Ltd | Manufacture of semiconductor device |
| US10195808B2 (en) | 2012-07-31 | 2019-02-05 | Wincor Nixdorf International, GmbH | Compacting apparatus for compacting receptacles |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS639848U (en) * | 1986-07-02 | 1988-01-22 |
-
1977
- 1977-09-14 JP JP11070377A patent/JPS5444477A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5563844A (en) * | 1978-11-03 | 1980-05-14 | Ibm | Method of forming insulator between conductive layers |
| JPS592187B2 (en) * | 1978-11-03 | 1984-01-17 | インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン | Method of forming an insulator between conductive layers |
| JPS57112028A (en) * | 1980-12-29 | 1982-07-12 | Fujitsu Ltd | Manufacture of semiconductor device |
| US10195808B2 (en) | 2012-07-31 | 2019-02-05 | Wincor Nixdorf International, GmbH | Compacting apparatus for compacting receptacles |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6143847B2 (en) | 1986-09-30 |
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