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JPS5442987A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5442987A
JPS5442987A JP10922177A JP10922177A JPS5442987A JP S5442987 A JPS5442987 A JP S5442987A JP 10922177 A JP10922177 A JP 10922177A JP 10922177 A JP10922177 A JP 10922177A JP S5442987 A JPS5442987 A JP S5442987A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
impurity
oxide film
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10922177A
Other languages
Japanese (ja)
Inventor
Hiroshi Yano
Takashi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10922177A priority Critical patent/JPS5442987A/en
Publication of JPS5442987A publication Critical patent/JPS5442987A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE: To prevent the channel-cut region from expanding toward the element region by introducing the impurity to the substrate through the recoil injection with irradiation of the impurity film with the inactive ion and then forming the thick oxide film plus the thin channel-cut region under the oxide film in a short time.
COPYRIGHT: (C)1979,JPO&Japio
JP10922177A 1977-09-10 1977-09-10 Manufacture of semiconductor device Pending JPS5442987A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10922177A JPS5442987A (en) 1977-09-10 1977-09-10 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10922177A JPS5442987A (en) 1977-09-10 1977-09-10 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5442987A true JPS5442987A (en) 1979-04-05

Family

ID=14504658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10922177A Pending JPS5442987A (en) 1977-09-10 1977-09-10 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5442987A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4814290A (en) * 1987-10-30 1989-03-21 International Business Machines Corporation Method for providing increased dopant concentration in selected regions of semiconductor devices
US5707888A (en) * 1995-05-04 1998-01-13 Lsi Logic Corporation Oxide formed in semiconductor substrate by implantation of substrate with a noble gas prior to oxidation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4814290A (en) * 1987-10-30 1989-03-21 International Business Machines Corporation Method for providing increased dopant concentration in selected regions of semiconductor devices
US5707888A (en) * 1995-05-04 1998-01-13 Lsi Logic Corporation Oxide formed in semiconductor substrate by implantation of substrate with a noble gas prior to oxidation
US5739580A (en) * 1995-05-04 1998-04-14 Lsi Logic Corporation Oxide formed in semiconductor substrate by implantation of substrate with a noble gas prior to oxidation

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