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JPS5442975A - Forming method of semiconductor electrode - Google Patents

Forming method of semiconductor electrode

Info

Publication number
JPS5442975A
JPS5442975A JP10877877A JP10877877A JPS5442975A JP S5442975 A JPS5442975 A JP S5442975A JP 10877877 A JP10877877 A JP 10877877A JP 10877877 A JP10877877 A JP 10877877A JP S5442975 A JPS5442975 A JP S5442975A
Authority
JP
Japan
Prior art keywords
forming method
semiconductor electrode
film
electrode
evaporating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10877877A
Other languages
Japanese (ja)
Other versions
JPS5742214B2 (en
Inventor
Koichi Sugiyama
Kunishige Oe
Seigo Ando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10877877A priority Critical patent/JPS5442975A/en
Publication of JPS5442975A publication Critical patent/JPS5442975A/en
Publication of JPS5742214B2 publication Critical patent/JPS5742214B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To obtain an ohmic electrode featuring large adhesive force and low electric resistance by evaporating Au - Zn film on P-type chemical semiconductor containing P as one of the primary components and then attaching the electrode composed of Cr, Ti, Mo and the like via the Au - Zn film.
COPYRIGHT: (C)1979,JPO&Japio
JP10877877A 1977-09-12 1977-09-12 Forming method of semiconductor electrode Granted JPS5442975A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10877877A JPS5442975A (en) 1977-09-12 1977-09-12 Forming method of semiconductor electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10877877A JPS5442975A (en) 1977-09-12 1977-09-12 Forming method of semiconductor electrode

Publications (2)

Publication Number Publication Date
JPS5442975A true JPS5442975A (en) 1979-04-05
JPS5742214B2 JPS5742214B2 (en) 1982-09-07

Family

ID=14493229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10877877A Granted JPS5442975A (en) 1977-09-12 1977-09-12 Forming method of semiconductor electrode

Country Status (1)

Country Link
JP (1) JPS5442975A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577982A (en) * 1980-06-18 1982-01-16 Fujitsu Ltd Manufacture of light emitting element
US5015603A (en) * 1988-06-17 1991-05-14 The United States Of America As Represented By The Secretary Of The Navy TiW diffusion barrier for AuZn ohmic contact to P-Type InP
JPH11177184A (en) * 1997-12-11 1999-07-02 Ricoh Co Ltd Semiconductor laser device and its manufacture

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577982A (en) * 1980-06-18 1982-01-16 Fujitsu Ltd Manufacture of light emitting element
US5015603A (en) * 1988-06-17 1991-05-14 The United States Of America As Represented By The Secretary Of The Navy TiW diffusion barrier for AuZn ohmic contact to P-Type InP
JPH11177184A (en) * 1997-12-11 1999-07-02 Ricoh Co Ltd Semiconductor laser device and its manufacture

Also Published As

Publication number Publication date
JPS5742214B2 (en) 1982-09-07

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