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JPS542666A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS542666A
JPS542666A JP6823877A JP6823877A JPS542666A JP S542666 A JPS542666 A JP S542666A JP 6823877 A JP6823877 A JP 6823877A JP 6823877 A JP6823877 A JP 6823877A JP S542666 A JPS542666 A JP S542666A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
insulation film
mask
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6823877A
Other languages
Japanese (ja)
Other versions
JPS6216547B2 (en
Inventor
Tadashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6823877A priority Critical patent/JPS542666A/en
Publication of JPS542666A publication Critical patent/JPS542666A/en
Publication of JPS6216547B2 publication Critical patent/JPS6216547B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE: To manufacture a semiconductor device of excellent characteristics by forming and selectively oxidizing a pattern so that a cross angle at the insulation film side between two sides of an insulation film and mask will not be less than 90°.
COPYRIGHT: (C)1979,JPO&Japio
JP6823877A 1977-06-08 1977-06-08 Manufacture of semiconductor device Granted JPS542666A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6823877A JPS542666A (en) 1977-06-08 1977-06-08 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6823877A JPS542666A (en) 1977-06-08 1977-06-08 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS542666A true JPS542666A (en) 1979-01-10
JPS6216547B2 JPS6216547B2 (en) 1987-04-13

Family

ID=13367997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6823877A Granted JPS542666A (en) 1977-06-08 1977-06-08 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS542666A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5756935A (en) * 1980-09-22 1982-04-05 Nec Corp Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5243370A (en) * 1975-10-01 1977-04-05 Hitachi Ltd Method of forming depression in semiconductor substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5243370A (en) * 1975-10-01 1977-04-05 Hitachi Ltd Method of forming depression in semiconductor substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5756935A (en) * 1980-09-22 1982-04-05 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPS6216547B2 (en) 1987-04-13

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