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JPS5419372A - Production of semiconductor memory - Google Patents

Production of semiconductor memory

Info

Publication number
JPS5419372A
JPS5419372A JP8483377A JP8483377A JPS5419372A JP S5419372 A JPS5419372 A JP S5419372A JP 8483377 A JP8483377 A JP 8483377A JP 8483377 A JP8483377 A JP 8483377A JP S5419372 A JPS5419372 A JP S5419372A
Authority
JP
Japan
Prior art keywords
production
semiconductor memory
drain
alignment
self
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8483377A
Other languages
Japanese (ja)
Other versions
JPS6255710B2 (en
Inventor
Masanori Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8483377A priority Critical patent/JPS5419372A/en
Publication of JPS5419372A publication Critical patent/JPS5419372A/en
Publication of JPS6255710B2 publication Critical patent/JPS6255710B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H01L29/7881—

Landscapes

  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To produce a non-volatile memory device of high performances by forming p<+> layers in self-alignment to source and drain to a p type substrate, and forming the source and drain also in self-alignment to both of external and floating gates.
JP8483377A 1977-07-14 1977-07-14 Production of semiconductor memory Granted JPS5419372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8483377A JPS5419372A (en) 1977-07-14 1977-07-14 Production of semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8483377A JPS5419372A (en) 1977-07-14 1977-07-14 Production of semiconductor memory

Publications (2)

Publication Number Publication Date
JPS5419372A true JPS5419372A (en) 1979-02-14
JPS6255710B2 JPS6255710B2 (en) 1987-11-20

Family

ID=13841771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8483377A Granted JPS5419372A (en) 1977-07-14 1977-07-14 Production of semiconductor memory

Country Status (1)

Country Link
JP (1) JPS5419372A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5664469A (en) * 1979-09-04 1981-06-01 Texas Instruments Inc Programmable nonnvolatile floating gate type semiconductor memory device and method of manufacturing same
JPS56104473A (en) * 1980-01-25 1981-08-20 Hitachi Ltd Semiconductor memory device and manufacture thereof
JPS57130475A (en) * 1981-02-06 1982-08-12 Mitsubishi Electric Corp Semiconductor memory storage and its manufacture
JPS60134477A (en) * 1983-12-23 1985-07-17 Toshiba Corp Nonvolatile memory and manufacture thereof
JPH04211178A (en) * 1990-03-13 1992-08-03 Toshiba Corp Manufacture of semiconductor device
JPH05136427A (en) * 1991-05-15 1993-06-01 Philips Gloeilampenfab:Nv Programmable transistor and manufacture thereof
JPH07161853A (en) * 1993-12-01 1995-06-23 Nec Corp Nonvolatile semiconductor memory, its erasing method and manufacturing method
JP2006507682A (en) * 2002-11-26 2006-03-02 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド Method for manufacturing laterally doped channels

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010043800A (en) * 1999-03-24 2001-05-25 이데이 노부유끼 Robot

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5159281A (en) * 1974-11-20 1976-05-24 Mitsubishi Electric Corp Handotaisochino seizoho
JPS5259585A (en) * 1975-10-29 1977-05-17 Intel Corp Method of producing mos polycrystalline ic
JPS52146569A (en) * 1976-05-31 1977-12-06 Toshiba Corp Semiconductor memory device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5159281A (en) * 1974-11-20 1976-05-24 Mitsubishi Electric Corp Handotaisochino seizoho
JPS5259585A (en) * 1975-10-29 1977-05-17 Intel Corp Method of producing mos polycrystalline ic
JPS52146569A (en) * 1976-05-31 1977-12-06 Toshiba Corp Semiconductor memory device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5664469A (en) * 1979-09-04 1981-06-01 Texas Instruments Inc Programmable nonnvolatile floating gate type semiconductor memory device and method of manufacturing same
JPS56104473A (en) * 1980-01-25 1981-08-20 Hitachi Ltd Semiconductor memory device and manufacture thereof
JPH0147905B2 (en) * 1980-01-25 1989-10-17 Hitachi Ltd
JPS57130475A (en) * 1981-02-06 1982-08-12 Mitsubishi Electric Corp Semiconductor memory storage and its manufacture
JPS60134477A (en) * 1983-12-23 1985-07-17 Toshiba Corp Nonvolatile memory and manufacture thereof
JPH04211178A (en) * 1990-03-13 1992-08-03 Toshiba Corp Manufacture of semiconductor device
JPH05136427A (en) * 1991-05-15 1993-06-01 Philips Gloeilampenfab:Nv Programmable transistor and manufacture thereof
JPH07161853A (en) * 1993-12-01 1995-06-23 Nec Corp Nonvolatile semiconductor memory, its erasing method and manufacturing method
JP2006507682A (en) * 2002-11-26 2006-03-02 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド Method for manufacturing laterally doped channels

Also Published As

Publication number Publication date
JPS6255710B2 (en) 1987-11-20

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