JPS54162199A - Voltage nonlinear resistance - Google Patents
Voltage nonlinear resistanceInfo
- Publication number
- JPS54162199A JPS54162199A JP7191878A JP7191878A JPS54162199A JP S54162199 A JPS54162199 A JP S54162199A JP 7191878 A JP7191878 A JP 7191878A JP 7191878 A JP7191878 A JP 7191878A JP S54162199 A JPS54162199 A JP S54162199A
- Authority
- JP
- Japan
- Prior art keywords
- glass material
- semiconductor crystal
- type
- type semiconductor
- ceo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Thermistors And Varistors (AREA)
Abstract
PURPOSE: To obtain a varistor with lower rise voltage, greater non-linear factor and excellent stability by diffusing n-type semiconductor crystal particles into glass material that shows n-type conductivity.
CONSTITUTION: 40 to 90% of n-type semiconductor crystal particles of 1 to 10μ the principal ingredient of which is zinc oxide is diffused into 10 to 60% of n-type glass material the principal ingredient of which is lead oxide in weight percentage. As a preferable n-type glass material, 80.3 to 99.2% of materials, which contains 66.5 to 81.5% of PbO, 10.3 to 15.5% of B2O3 and 1.2 to 3.5% of SiO2, and 0.8 to 19.7% of materials, which contains one or more of ZnO, CoO, MnO2, CeO2, SnO2, Fe2O3, Ta2O5, TiO2, Sb2O3and Cr2O3 in mol percentage, are used. Also as a preferable n-type semiconductor crystal, it contains ZnO as the principal gredient, 0.3 to 1.2% of CoO, 0.5 to 1.2% of MnO and 0.2 to 1.3% of CeO2 in mol percentage.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7191878A JPS54162199A (en) | 1978-06-13 | 1978-06-13 | Voltage nonlinear resistance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7191878A JPS54162199A (en) | 1978-06-13 | 1978-06-13 | Voltage nonlinear resistance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54162199A true JPS54162199A (en) | 1979-12-22 |
Family
ID=13474385
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7191878A Pending JPS54162199A (en) | 1978-06-13 | 1978-06-13 | Voltage nonlinear resistance |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54162199A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993017438A1 (en) * | 1992-02-25 | 1993-09-02 | Matsushita Electric Industrial Co., Ltd. | Zinc oxide varistor and production thereof |
| CN1034370C (en) * | 1992-03-27 | 1997-03-26 | 松下电器产业株式会社 | Zinc oxide adjustable resistor and it preparation method |
-
1978
- 1978-06-13 JP JP7191878A patent/JPS54162199A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993017438A1 (en) * | 1992-02-25 | 1993-09-02 | Matsushita Electric Industrial Co., Ltd. | Zinc oxide varistor and production thereof |
| US5594406A (en) * | 1992-02-25 | 1997-01-14 | Matsushita Electric Industrial Co., Ltd. | Zinc oxide varistor and process for the production thereof |
| CN1034370C (en) * | 1992-03-27 | 1997-03-26 | 松下电器产业株式会社 | Zinc oxide adjustable resistor and it preparation method |
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