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JPS54152873A - Field effect type thyristor - Google Patents

Field effect type thyristor

Info

Publication number
JPS54152873A
JPS54152873A JP6098178A JP6098178A JPS54152873A JP S54152873 A JPS54152873 A JP S54152873A JP 6098178 A JP6098178 A JP 6098178A JP 6098178 A JP6098178 A JP 6098178A JP S54152873 A JPS54152873 A JP S54152873A
Authority
JP
Japan
Prior art keywords
region
type
substrate
gate
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6098178A
Other languages
Japanese (ja)
Other versions
JPS6046550B2 (en
Inventor
Susumu Murakami
Yoshio Terasawa
Kenji Miyata
Saburo Oikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6098178A priority Critical patent/JPS6046550B2/en
Publication of JPS54152873A publication Critical patent/JPS54152873A/en
Publication of JPS6046550B2 publication Critical patent/JPS6046550B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1066—Gate region of field-effect devices with PN junction gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To shorten the switching time by forming the gate layer constituting the thyristor with the plate-type part parallel to the substrate surface and furthermore setting the width of the area existing between the adjacent channels to less than double the minor carrier diffusion length of the substrate. CONSTITUTION:P<+>-type anode layer 2 is formed by diffusion on the back of N- type semiconductor substrate 1, and anode electrode 6 is coated on the entire surface of layer 2. At the same time, plural units of N<+>-type cathode regions 4 are formed by diffusion on the surface of substrate 1 with cathode electrode 7 coated on the surface. Then gate region 3 is formed by diffusion more deeply than region 4 within substrate 1 positioning between regions 4, and the shape of region 3 is formed as follows: P<+>-type gate linking part 32 is formed between regions 4, and panel-type P<+>-type gate region 31 connecting to part 32 is put under region 4. In this case, the width of region 31 is set to under double the carrier diffusion length of channel 5 caused between region 31 and 4, and gate electrode 8 is attached to part 32.
JP6098178A 1978-05-24 1978-05-24 field effect thyristor Expired JPS6046550B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6098178A JPS6046550B2 (en) 1978-05-24 1978-05-24 field effect thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6098178A JPS6046550B2 (en) 1978-05-24 1978-05-24 field effect thyristor

Publications (2)

Publication Number Publication Date
JPS54152873A true JPS54152873A (en) 1979-12-01
JPS6046550B2 JPS6046550B2 (en) 1985-10-16

Family

ID=13158106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6098178A Expired JPS6046550B2 (en) 1978-05-24 1978-05-24 field effect thyristor

Country Status (1)

Country Link
JP (1) JPS6046550B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5788771A (en) * 1980-11-21 1982-06-02 Semiconductor Res Found Electrostatic induction thyristor
JP2013149957A (en) * 2011-12-22 2013-08-01 Ngk Insulators Ltd Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5788771A (en) * 1980-11-21 1982-06-02 Semiconductor Res Found Electrostatic induction thyristor
JPH0126187B2 (en) * 1980-11-21 1989-05-22 Handotai Kenkyu Shinkokai
JP2013149957A (en) * 2011-12-22 2013-08-01 Ngk Insulators Ltd Semiconductor device
EP2608265A3 (en) * 2011-12-22 2015-12-23 NGK Insulators, Ltd. Semiconductor device having a gate electrode

Also Published As

Publication number Publication date
JPS6046550B2 (en) 1985-10-16

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