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JPS54158121A - Solid state image pickup device - Google Patents

Solid state image pickup device

Info

Publication number
JPS54158121A
JPS54158121A JP6656778A JP6656778A JPS54158121A JP S54158121 A JPS54158121 A JP S54158121A JP 6656778 A JP6656778 A JP 6656778A JP 6656778 A JP6656778 A JP 6656778A JP S54158121 A JPS54158121 A JP S54158121A
Authority
JP
Japan
Prior art keywords
substrate
conducting type
main surface
several units
impurity density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6656778A
Other languages
Japanese (ja)
Other versions
JPS6242426B2 (en
Inventor
Hidekazu Ogura
Masanori Kaneko
Shinya Oba
Norio Koike
Tadao Yoneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6656778A priority Critical patent/JPS54158121A/en
Publication of JPS54158121A publication Critical patent/JPS54158121A/en
Publication of JPS6242426B2 publication Critical patent/JPS6242426B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Color Television Image Signal Generators (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE: To increase the signal charge capacity of the picture element and thus to correct the spectral characteristics as well as to reduce the dispersion of the optical signals by providing the high-impurity density layer featuring the same conducting type as the semiconductor substrate under the diffusion layer forming the photo diode.
CONSTITUTION: Several units of photo diodes are formed with the single-conducting semiconductor substrate 21 and several units of diffusion layers 22 which are distributed separately on one main surface of substrate 21 and features the opposite conducting type to substrate 21. Then the scanning circuit to read out sequentially the optical information of these photo diodes along with the switch elements are provided on one main surface of substrate 21. And high-impurity density layer 25 fraturing the same conducting type as substrate 21 is provided under layer 22, i.e., inside substrate 21.
COPYRIGHT: (C)1979,JPO&Japio
JP6656778A 1978-06-02 1978-06-02 Solid state image pickup device Granted JPS54158121A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6656778A JPS54158121A (en) 1978-06-02 1978-06-02 Solid state image pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6656778A JPS54158121A (en) 1978-06-02 1978-06-02 Solid state image pickup device

Publications (2)

Publication Number Publication Date
JPS54158121A true JPS54158121A (en) 1979-12-13
JPS6242426B2 JPS6242426B2 (en) 1987-09-08

Family

ID=13319652

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6656778A Granted JPS54158121A (en) 1978-06-02 1978-06-02 Solid state image pickup device

Country Status (1)

Country Link
JP (1) JPS54158121A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57148368A (en) * 1981-03-09 1982-09-13 Nec Corp Solid state color image pickup element
JPS59108458A (en) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd Solid-state image pickup device and its manufacture
JPS6027164A (en) * 1983-07-25 1985-02-12 Mitsubishi Electric Corp Infrared-ray solid-state image pickup element
WO1985003166A1 (en) * 1983-12-29 1985-07-18 Research Development Corporation Of Japan Colour image sensor
JPS60245165A (en) * 1984-05-21 1985-12-04 Hitachi Ltd Solid state image pick-up device
JPS6149464A (en) * 1984-08-17 1986-03-11 Matsushita Electronics Corp Solid-state image pickup device
JPS6341226B2 (en) * 1982-01-13 1988-08-16 Fuji Xerox Co Ltd

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57171885A (en) * 1982-03-29 1982-10-22 Hitachi Ltd Solid-state image pickup device
JPS6126270A (en) * 1984-07-16 1986-02-05 Fanuc Ltd Light emitting device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57171885A (en) * 1982-03-29 1982-10-22 Hitachi Ltd Solid-state image pickup device
JPS6126270A (en) * 1984-07-16 1986-02-05 Fanuc Ltd Light emitting device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57148368A (en) * 1981-03-09 1982-09-13 Nec Corp Solid state color image pickup element
JPS6341226B2 (en) * 1982-01-13 1988-08-16 Fuji Xerox Co Ltd
JPS59108458A (en) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd Solid-state image pickup device and its manufacture
JPH0459828B2 (en) * 1982-12-14 1992-09-24 Orinpasu Kogaku Kogyo Kk
JPS6027164A (en) * 1983-07-25 1985-02-12 Mitsubishi Electric Corp Infrared-ray solid-state image pickup element
JPH0263311B2 (en) * 1983-07-25 1990-12-27 Mitsubishi Electric Corp
WO1985003166A1 (en) * 1983-12-29 1985-07-18 Research Development Corporation Of Japan Colour image sensor
US4791396A (en) * 1983-12-29 1988-12-13 Jun-ichi Nishizawa Color image sensor
JPS60245165A (en) * 1984-05-21 1985-12-04 Hitachi Ltd Solid state image pick-up device
JPS6149464A (en) * 1984-08-17 1986-03-11 Matsushita Electronics Corp Solid-state image pickup device

Also Published As

Publication number Publication date
JPS6242426B2 (en) 1987-09-08

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