JPS5415668B2 - - Google Patents
Info
- Publication number
- JPS5415668B2 JPS5415668B2 JP1044076A JP1044076A JPS5415668B2 JP S5415668 B2 JPS5415668 B2 JP S5415668B2 JP 1044076 A JP1044076 A JP 1044076A JP 1044076 A JP1044076 A JP 1044076A JP S5415668 B2 JPS5415668 B2 JP S5415668B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H01L29/105—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
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- H01L27/0623—
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- H01L27/0716—
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- H01L27/0927—
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- H01L29/00—
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7107805.A NL160988C (nl) | 1971-06-08 | 1971-06-08 | Halfgeleiderinrichting met een halfgeleiderlichaam, be- vattende ten minste een eerste veldeffecttransistor met geisoleerde stuurelektrode en werkwijze voor de vervaar- diging van de halfgeleiderinrichting. |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS51139277A JPS51139277A (en) | 1976-12-01 |
JPS5415668B2 true JPS5415668B2 (da) | 1979-06-16 |
Family
ID=19813322
Family Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3838872A Pending JPS5416194B1 (da) | 1971-06-08 | 1972-04-18 | |
JP1043876A Expired JPS5416397B2 (da) | 1971-06-08 | 1976-02-04 | |
JP51010439A Granted JPS51139276A (en) | 1971-06-08 | 1976-02-04 | Semiconductor device |
JP51010440A Granted JPS51139277A (en) | 1971-06-08 | 1976-02-04 | Method of producing semiconductor device |
JP8223280A Pending JPS568880A (en) | 1971-06-08 | 1980-06-19 | Semiconductor device |
Family Applications Before (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3838872A Pending JPS5416194B1 (da) | 1971-06-08 | 1972-04-18 | |
JP1043876A Expired JPS5416397B2 (da) | 1971-06-08 | 1976-02-04 | |
JP51010439A Granted JPS51139276A (en) | 1971-06-08 | 1976-02-04 | Semiconductor device |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8223280A Pending JPS568880A (en) | 1971-06-08 | 1980-06-19 | Semiconductor device |
Country Status (16)
Country | Link |
---|---|
JP (5) | JPS5416194B1 (da) |
AT (1) | AT351597B (da) |
BE (1) | BE782285A (da) |
BR (1) | BR7202321D0 (da) |
CA (1) | CA963172A (da) |
CH (1) | CH542519A (da) |
DE (1) | DE2218680C2 (da) |
DK (1) | DK135819B (da) |
ES (2) | ES401854A1 (da) |
FR (1) | FR2140383B1 (da) |
GB (1) | GB1389311A (da) |
IN (1) | IN139051B (da) |
IT (1) | IT958758B (da) |
NL (1) | NL160988C (da) |
NO (1) | NO134676C (da) |
SE (1) | SE371333B (da) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6319134Y2 (da) * | 1982-12-06 | 1988-05-30 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7205000A (da) * | 1972-04-14 | 1973-10-16 | ||
US3920481A (en) * | 1974-06-03 | 1975-11-18 | Fairchild Camera Instr Co | Process for fabricating insulated gate field effect transistor structure |
CA1017073A (en) * | 1974-06-03 | 1977-09-06 | Fairchild Camera And Instrument Corporation | Complementary insulated gate field effect transistor structure and process for fabricating the structure |
US3943542A (en) * | 1974-11-06 | 1976-03-09 | International Business Machines, Corporation | High reliability, low leakage, self-aligned silicon gate FET and method of fabricating same |
JPS5286083A (en) | 1976-01-12 | 1977-07-16 | Hitachi Ltd | Production of complimentary isolation gate field effect transistor |
US4277882A (en) * | 1978-12-04 | 1981-07-14 | Fairchild Camera And Instrument Corporation | Method of producing a metal-semiconductor field-effect transistor |
JPS58222558A (ja) * | 1982-06-18 | 1983-12-24 | Hitachi Ltd | 半導体装置 |
JPS5955052A (ja) * | 1982-09-24 | 1984-03-29 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
US4470191A (en) * | 1982-12-09 | 1984-09-11 | International Business Machines Corporation | Process for making complementary transistors by sequential implantations using oxidation barrier masking layer |
JPS60106890A (ja) * | 1983-11-14 | 1985-06-12 | Shin Etsu Chem Co Ltd | グリ−ス組成物 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3356858A (en) * | 1963-06-18 | 1967-12-05 | Fairchild Camera Instr Co | Low stand-by power complementary field effect circuitry |
GB1086607A (en) * | 1965-06-03 | 1967-10-11 | Ncr Co | Method of electrically isolating components in solid-state electronic circuits |
US3440500A (en) * | 1966-09-26 | 1969-04-22 | Itt | High frequency field effect transistor |
US3534234A (en) * | 1966-12-15 | 1970-10-13 | Texas Instruments Inc | Modified planar process for making semiconductor devices having ultrafine mesa type geometry |
US3470390A (en) * | 1968-02-02 | 1969-09-30 | Westinghouse Electric Corp | Integrated back-to-back diodes to prevent breakdown of mis gate dielectric |
-
1971
- 1971-06-08 NL NL7107805.A patent/NL160988C/xx not_active IP Right Cessation
-
1972
- 1972-04-18 ES ES401854A patent/ES401854A1/es not_active Expired
- 1972-04-18 AT AT338972A patent/AT351597B/de not_active IP Right Cessation
- 1972-04-18 CH CH570072A patent/CH542519A/de not_active IP Right Cessation
- 1972-04-18 DE DE2218680A patent/DE2218680C2/de not_active Expired
- 1972-04-18 JP JP3838872A patent/JPS5416194B1/ja active Pending
- 1972-04-18 BR BR2321/72A patent/BR7202321D0/pt unknown
- 1972-04-18 FR FR7213556A patent/FR2140383B1/fr not_active Expired
- 1972-04-18 CA CA140,068A patent/CA963172A/en not_active Expired
- 1972-04-18 IT IT68209/72A patent/IT958758B/it active
- 1972-04-18 NO NO1346/72A patent/NO134676C/no unknown
- 1972-04-18 DK DK188272AA patent/DK135819B/da not_active IP Right Cessation
- 1972-04-18 GB GB1786072A patent/GB1389311A/en not_active Expired
- 1972-04-18 BE BE782285A patent/BE782285A/xx not_active IP Right Cessation
- 1972-04-18 SE SE7205034A patent/SE371333B/xx unknown
- 1972-11-15 ES ES408617A patent/ES408617A1/es not_active Expired
-
1973
- 1973-03-15 IN IN584/CAL/73A patent/IN139051B/en unknown
-
1976
- 1976-02-04 JP JP1043876A patent/JPS5416397B2/ja not_active Expired
- 1976-02-04 JP JP51010439A patent/JPS51139276A/ja active Granted
- 1976-02-04 JP JP51010440A patent/JPS51139277A/ja active Granted
-
1980
- 1980-06-19 JP JP8223280A patent/JPS568880A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6319134Y2 (da) * | 1982-12-06 | 1988-05-30 |
Also Published As
Publication number | Publication date |
---|---|
JPS568880A (en) | 1981-01-29 |
CA963172A (en) | 1975-02-18 |
BE782285A (fr) | 1972-10-18 |
JPS5416194B1 (da) | 1979-06-20 |
FR2140383A1 (da) | 1973-01-19 |
CH542519A (de) | 1973-09-30 |
NO134676B (da) | 1976-08-16 |
IN139051B (da) | 1976-05-01 |
JPS51139277A (en) | 1976-12-01 |
FR2140383B1 (da) | 1977-08-19 |
AT351597B (de) | 1979-08-10 |
NL160988B (nl) | 1979-07-16 |
ES408617A1 (es) | 1975-10-01 |
NL160988C (nl) | 1979-12-17 |
JPS51102481A (da) | 1976-09-09 |
NL7107805A (da) | 1972-12-12 |
DK135819C (da) | 1977-11-28 |
ATA338972A (de) | 1979-01-15 |
BR7202321D0 (pt) | 1973-06-07 |
SE371333B (da) | 1974-11-11 |
GB1389311A (en) | 1975-04-03 |
DE2218680A1 (de) | 1972-12-28 |
IT958758B (it) | 1973-10-30 |
DE2218680C2 (de) | 1982-04-29 |
JPS51139276A (en) | 1976-12-01 |
JPS5415667B2 (da) | 1979-06-16 |
ES401854A1 (es) | 1975-10-16 |
JPS5416397B2 (da) | 1979-06-21 |
NO134676C (da) | 1976-11-24 |
DK135819B (da) | 1977-06-27 |